LM3146M datasheet, PDF - EEWORLD Datasheet

LM3146M: DescriptionLM3146 High Voltage Transistor Array; CategoryDiscrete semiconductor The transistor; File Size151KB，6 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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LM3146M Overview

LM3146 High Voltage Transistor Array

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
package instruction	SMALL OUTLINE, R-PDSO-G14
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	30 V
Configuration	COMPLEX
Minimum DC current gain (hFE)	30
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G14
JESD-609 code	e0
Number of components	5
Number of terminals	14
Maximum operating temperature	85 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	500 MHz

	LM3146M	LM3146	LM3146N
Description	LM3146 High Voltage Transistor Array	LM3146 High Voltage Transistor Array	LM3146 High Voltage Transistor Array
Is it Rohs certified?	incompatible	-	incompatible
Maker	National Semiconductor（TI ）	-	National Semiconductor（TI ）
package instruction	SMALL OUTLINE, R-PDSO-G14	-	IN-LINE, R-PDIP-T14
Reach Compliance Code	unknow	-	unknow
ECCN code	EAR99	-	EAR99
Maximum collector current (IC)	0.05 A	-	0.05 A
Collector-emitter maximum voltage	30 V	-	30 V
Configuration	COMPLEX	-	COMPLEX
Minimum DC current gain (hFE)	30	-	30
highest frequency band	VERY HIGH FREQUENCY BAND	-	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G14	-	R-PDIP-T14
JESD-609 code	e0	-	e0
Number of components	5	-	5
Number of terminals	14	-	14
Maximum operating temperature	85 °C	-	85 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	NPN	-	NPN
Certification status	Not Qualified	-	Not Qualified
surface mount	YES	-	NO
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	THROUGH-HOLE
Terminal location	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	AMPLIFIER	-	AMPLIFIER
Transistor component materials	SILICON	-	SILICON
Nominal transition frequency (fT)	500 MHz	-	500 MHz

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