INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
MJ12004
DESCRIPTION
·
Collector-Emitter Voltage-
V
CEX
= 1500V
·Safe
Operation Area
·Switching
Time with Inductive Load
APPLICATIONS
·Designed
for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CEX
V
CEO(SUS)
V
EBO
I
C
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Emitter Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
1500
750
5
5
4
9
100
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
I
E
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MJ12004
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
=50mA ; I
B
=0
B
750
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
C
=4.5A; I
B
= 1.8A
5.0
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
=3.5A; I
B
= 1.5A
5.0
V
V
BE
(sat)-1
Base-Emitter Saturation Voltage
I
C
= 4.5A; I
B
= 1.8A
1.5
V
V
BE
(sat)-2
Base-Emitter Saturation Voltage
I
C
=3.5A; I
B
= 1.5A
1.5
V
I
CES
Collector Cutoff Current
V
CE
= 1500V; V
BE
= 0
1.0
mA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
=0
1.0
mA
h
FE
DC Current Gain
I
C
= 0.5A ; V
CE
= 5V
12
f
T
Current-Gain—Bandwidth Product
I
C
= 0.1A; V
CE
= 5V; f
test
=1.0MHz
4
MHz
C
OB
Output Capacitance
I
E
= 0; V
CB
= 10V; f
test
=0.1MHz
125
pF
t
f
Fall Time
I
C
=4.5A , I
B1
=1.8A; L
B
=8μH
0.4
1.0
μs
isc Website：www.iscsemi.cn
2
Embedded System
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