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MJE6041

Description
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size237KB,2 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

MJE6041 Overview

10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB

MJE6041 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current10 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionTO-220, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureDARLINGTON
Shell connectionCOLLECTOR
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Maximum ambient power consumption75 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor1000
Rated crossover frequency4 MHz
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