MMBD4448HCDW datasheet, PDF - EEWORLD Datasheet

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MMBD4448HCDW: Description0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor Small signal switching diode; File Size258KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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MMBD4448HCDW Overview

0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE

MMBD4448HCDW Parametric

Parameter Name	Attribute value
Case Style	SOT-363
IF（mA）	250
Maximum recurrent peak reverse voltage	80
TRR（nS)	4.0
Maximum instantaneous forward voltage	1.25
@IF（uA）	0.15
Maximum reverse curre	2.5
@VR	75
class	Diodes

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MMBD4448HCQW/AWQW/ADW/CDW/SDW/TW

Surface Mount Fast Switching Diodes

SOT-363

Features

High conductance.

Fast switching speed.

Ultra-small surface mount package.

For general purpose switching application.

Applications

High speed switching application.

Dimensions in inches and (millimeters)

MMBD4448HCQW

MMBD4448HAQW

MMBD4448HADW

MMBD4448HCDW

MMBD4448HSDW

MMBD4448HTW

Ordering Information

Type No.

MMBD4448HCQW

MMBD4448HAQW

MMBD4448HADW

MMBD4448HCDW

MMBD4448HSDW

MMBD4448HTW

Marking

KA4

KA5

KA6

KA7

KAB

KAA

Package Code

SOT-363

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

V

RM

V

RRM

V

RWM

V

R

V

R(RMS)

I

FM

I

O

I

FSM

P

D

R

θJA

T

j,

T

stg

Characteristic

Non-Repetitive peak reverse voltage

Repetitive peak reverse Voltage

Working peak reverse voltage

DC reverse voltage

RMS Reverse voltage

Forward continuous current

Average rectified output current

Forward surge current

Power Dissipation

Thermal resistance,Junction to ambient air

Junction and Storage Temperature

@t=1.0μs

@t=1.0s

Value

100

80

57

500

250

4.0

2.0

200

625

-65 to+150

Unit

V

mA

A

mW

℃/W

℃

http://www.luguang.cn

mail:lge@luguang.cn

MMBD4448HCDW Related Products

	MMBD4448HCDW	MMBD4448HADW	MMBD4448HAQW	MMBD4448HCQW	MMBD4448HSDW	MMBD4448HTW
Description	0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE	0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE	0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE	0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE	0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE	0.25 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE
Case Style	SOT-363	SOT-363	SOT-363	SOT-363	SOT-363	SOT-363
IF（mA）	250	250	250	250	250	250
Maximum recurrent peak reverse voltage	80	80	80	80	80	80
TRR（nS)	4.0	4.0	4.0	4.0	4.0	4.0
Maximum instantaneous forward voltage	1.25	1.25	1.25	1.25	1.25	1.25
@IF（uA）	0.15	150	150	150	0.15	0.15
Maximum reverse curre	2.5	2.5	2.5	2.5	2.5	2.5
@VR	75	75	75	75	75	75
class	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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