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MMBD4448HADW

Description
0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    Small signal switching diode   
File Size258KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

MMBD4448HADW Overview

0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE

MMBD4448HADW Parametric

Parameter NameAttribute value
Case StyleSOT-363
IF(mA)250
Maximum recurrent peak reverse voltage80
TRR(nS)4.0
Maximum instantaneous forward voltage1.25
@IF(uA)150
Maximum reverse curre2.5
@VR75
classDiodes
MMBD4448HCQW/AWQW/ADW/CDW/SDW/TW
Surface Mount Fast Switching Diodes
SOT-363
Features
High conductance.
Fast switching speed.
Ultra-small surface mount package.
For general purpose switching application.
Applications
High speed switching application.
Dimensions in inches and (millimeters)
MMBD4448HCQW
MMBD4448HAQW
MMBD4448HADW
MMBD4448HCDW
MMBD4448HSDW
MMBD4448HTW
Ordering Information
Type No.
MMBD4448HCQW
MMBD4448HAQW
MMBD4448HADW
MMBD4448HCDW
MMBD4448HSDW
MMBD4448HTW
Marking
KA4
KA5
KA6
KA7
KAB
KAA
Package Code
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
D
R
θJA
T
j,
T
stg
Characteristic
Non-Repetitive peak reverse voltage
Repetitive peak reverse Voltage
Working peak reverse voltage
DC reverse voltage
RMS Reverse voltage
Forward continuous current
Average rectified output current
Forward surge current
Power Dissipation
Thermal resistance,Junction to ambient air
Junction and Storage Temperature
@t=1.0μs
@t=1.0s
Value
100
80
57
500
250
4.0
2.0
200
625
-65 to+150
Unit
V
V
V
mA
mA
A
mW
℃/W
http://www.luguang.cn
mail:lge@luguang.cn

MMBD4448HADW Related Products

MMBD4448HADW MMBD4448HAQW MMBD4448HCDW MMBD4448HCQW MMBD4448HSDW MMBD4448HTW
Description 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.25 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE
Case Style SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363
IF(mA) 250 250 250 250 250 250
Maximum recurrent peak reverse voltage 80 80 80 80 80 80
TRR(nS) 4.0 4.0 4.0 4.0 4.0 4.0
Maximum instantaneous forward voltage 1.25 1.25 1.25 1.25 1.25 1.25
@IF(uA) 150 150 0.15 150 0.15 0.15
Maximum reverse curre 2.5 2.5 2.5 2.5 2.5 2.5
@VR 75 75 75 75 75 75
class Diodes Diodes Diodes Diodes Diodes Diodes
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