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SB120_07

Description
1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL
Categorysemiconductor    Discrete semiconductor   
File Size74KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SB120_07 Overview

1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL

SB110, SB120, SB130, SB140, SB150, SB160
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
FEATURES
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-41 (DO-204AL)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Circuit configuration
1.0 A
10 V, 20 V, 30 V, 40 V, 50 V, 60 V
50 A
0.48 V, 0.65 V
125 °C, 150 °C
DO-41 (DO-204AL)
Single
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-41 (DO-204AL)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
-65 to + 125
-65 to + 150
SB110
10
7
10
SB120
20
14
20
SB130
30
21
30
1.0
50
10 000
-65 to + 150
SB140
40
28
40
SB150
50
35
50
SB160
60
42
60
UNIT
V
V
V
A
A
V/μs
°C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum instantaneous reverse
current at rated DC blocking voltage
TEST CONDITIONS
1.0 A
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
F (1)
I
R (1)
SB110
SB120
SB130
SB140
SB150
SB160
UNIT
V
mA
0.48
0.50
10
5.0
0.65
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 05-May-17
Document Number: 88715
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL
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