b. Pulse width limited by maximum junction temperature.
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
ESD
450
280
145
- 55 to 150
2000
515
370
650
380
250
130
mW
°C
V
5s
20
±6
485
350
mA
Steady State
Unit
V
Document Number: 71170
S11-0854-Rev. E, 02-May-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1024X
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
V
DD
= 10 V, R
L
= 47
I
D
200 mA, V
GEN
= 4.5 V, R
g
= 10
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 250 mA
750
75
225
10
36
ns
pC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 600 mA
V
GS
= 2.5 V, I
D
= 500 mA
V
GS
= 1.8 V, I
D
= 350 mA
V
DS
= 10 V, I
D
= 400 mA
I
S
= 150 mA, V
GS
= 0 V
700
0.41
0.53
0.70
1
0.8
1.2
0.70
0.85
1.25
S
V
0.45
± 0.5
0.3
0.9
±1
100
5
V
µA
nA
µA
mA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1.0
V
GS
= 5
V
thru 1.8
V
0.8
I
D
- Drain Current (mA)
1200
T
C
= - 55 °C
1000
25 °C
800
125 °C
600
I
D
- Drain Current (A)
0.6
0.4
400
0.2
1
V
0.0
0.0
200
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
Transfer Characteristics
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Document Number: 71170
S11-0854-Rev. E, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1024X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
4.0
100
V
GS
= 0
V
f = 1 MHz
R
DS(on)
- On-Resistance (Ω)
3.2
C - Capacitance (pF)
80
C
iss
60
2.4
1.6
V
GS
= 1.8
V
0.8
V
GS
= 2.5
V
V
GS
= 4.5
V
0.0
0
200
400
600
800
1000
40
C
oss
20
0
0
C
rss
4
8
12
16
20
I
D
- Drain Current (mA)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
5
V
DS
= 10
V
I
D
= 250 mA
4
R
DS(on)
- On-Resistance
(Normalized)
1.40
1.60
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
= 4.5
V
I
D
= 600 mA
3
1.20
V
GS
= 1.8
V
I
D
= 350 mA
1.00
2
1
0.80
0
0.0
0.2
0.4
0.6
0.8
0.60
- 50
- 25
0
25
50
75
100
125
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
1000
T
J
= 125 °C
On-Resistance vs. Junction Temperature
5
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (mA)
4
I
D
= 350 mA
3
I
D
= 200 mA
2
100
T
J
= 25 °C
10
T
J
= - 55 °C
1
1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
6
V
SD
- So
u
rce-to-Drain
V
oltage (
V
)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71170
S11-0854-Rev. E, 02-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71170.
www.vishay.com
4
Document Number: 71170
S11-0854-Rev. E, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
SC-89 6-Leads (SOT-563F)
2
4
3
E1/2
D
e1
aaa
C
2x
A
6
5
4
4
D
B
SECTION
B-B
E/2
2
3
C
6
E1
E
2x
aaa
C
DETAIL “A”
5
1
e
B
4
2
3
2x
bbb
C
6x b
ddd
M
C
A–B D
L1
A1
L
A
A1
SEE
DETAIL “A”
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
DIM.
A
A1
b
c
D
E
E1
e
e1
L
L1
MILLIMETERS
MIN.
0.56
0
0.15
0.10
1.50
1.50
1.15
0.45
0.95
0.25
0.10
NOM.
0.58
0.02
0.22
0.14
1.60
1.60
1.20
0.50
1.00
0.35
0.20
MAX.
0.60
0.10
0.30
0.18
1.70
1.70
1.25
0.55
1.05
0.50
0.30
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
Revision: 11-Aug-14
Document Number: 71612
1
For technical questions, contact:
analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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