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SI1035X

Description
Complementary N- and P-Channel 20-V (D-S) MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size51KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SI1035X Overview

Complementary N- and P-Channel 20-V (D-S) MOSFET

SI1035X Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codecompli
Maximum drain current (Abs) (ID)0.18 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)0.28 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
Si1035X
New Product
Vishay Siliconix
Complementary N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
5 @ V
GS
= 4.5 V
N-Channel
20
7 @ V
GS
= 2.5 V
9 @ V
GS
= 1.8 V
10 @ V
GS
= 1.5 V
8 @ V
GS
= –4.5 V
P-Channel
–20
12 @ V
GS
= –2.5 V
15 @ V
GS
= –1.8 V
20 @ V
GS
= –1.5 V
I
D
(mA)
200
175
150
50
–150
–125
–100
–30
1.5 V Rated
FEATURES
D
Very Small Footprint
D
High-Side Switching
D
Low On-Resistance:
N-Channel, 5
W
P-Channel, 8
W
D
Low Threshold:
"0.9
V (typ)
D
Fast Switching Speed: 45 ns (typ)
D
1.5-V Operation
D
Gate-Source ESD Protection
BENEFITS
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
APPLICATIONS
D
D
D
D
Replace Digital Transistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
SC-89
S
1
1
6
D
1
G
1
2
5
G
2
Marking Code: M
D
2
3
4
S
2
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
P-Channel
5 secs
"5
Symbol
V
DS
V
GS
5 secs
Steady State
20
Steady State
–20
Unit
V
190
I
D
I
DM
I
S
P
D
T
J
, T
stg
ESD
450
280
145
140
650
180
130
–155
–110
–650
–145
–105
mA
–380
250
130
mW
_C
V
380
250
130
–55 to 150
2000
–450
280
145
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71426
S-03201—Rev. A, 12-Mar-01
www.vishay.com
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