Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
−55
to 125°C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 71501
S-52291Rev. D, 31-Oct-05
www.vishay.com
1
SPICE Device Model Si1410EDH
Vishay Siliconix
SPECIFICATIONS (T
J
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
On-State Drain Current
a
a
Symbol
Test Condition
Simulated
Data
0.56
77
0.055
0.067
0.082
11
0.75
Measured
Data
Unit
V
GS(th)
I
D(on)
V
DS
= V
GS
, I
D
= 250
µA
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 3.7 A
V
A
0.055
0.065
0.080
10
0.75
S
V
Ω
Drain-Source On-State Resistance
r
DS(on)
V
GS
= 2.5 V, I
D
= 3.4 A
V
GS
= 1.8 V, I
D
= 1.7 A
Forward Transconductance
Diode Forward Voltage
a
a
g
fs
V
SD
V
DS
= 10 V, I
D
= 3.7 A
I
S
= 1.4 A, V
GS
= 0 V
Dynamic
b
Total Gate Charge
b
Gate-Source Charge
b
Gate-Drain Charge
b
b
Q
g
Q
gs
Q
gd
t
d(on)
t
r
b
5.4
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3.7 A
0.75
1.10
0.97
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
G
= 6
Ω
2.6
2.5
2.8
5.6
0.75
1.10
0.15
0.4
1.9
1.2
ns
nC
Turn-On Delay Time
Rise Time
b
Turn-Off Delay Time
Fall Time
b
t
d(off)
t
f
Notes
a. Pulse test; pulse width
≤
300
µs,
duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 71501
S-52291Rev. D, 31-Oct-05
SPICE Device Model Si1410EDH
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (T
J
=25°C UNLESS OTHERWISE NOTED)
Document Number: 71501
S-52291Rev. D, 31-Oct-05
www.vishay.com
3
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Vishay
Disclaimer
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
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