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SI1426DH

Description
N-Channel 30-V (D-S) MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size40KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SI1426DH Overview

N-Channel 30-V (D-S) MOSFET

SI1426DH Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)2.8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.6 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Si1426DH
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
0.115 @ V
GS
= 4.5 V
2.9
r
DS(on)
(W)
0.075 @ V
GS
= 10 V
I
D
(A)
3.6
D
TrenchFETr Power MOSFET
D
Thermally Enhanced SC-70 Package
D
PWM Optimized
APPLICATIONS
D
Boost Converter in Portable Devices
– Low Gate Charge (3 nC)
D
Low Current Synchronous Rectifier
SOT-363
SC-70 (6-LEADS)
D
1
6
D
Marking Code
D
2
5
D
AC
G
3
4
S
XX
YY
Lot Traceability
and Date Code
Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 85_C
I
DM
I
S
1.3
1.6
0.8
–55 to 150
2.6
10
0.8
1.0
0.5
W
_C
2.1
A
Symbol
V
DS
V
GS
5 secs
30
Steady State
Unit
V
"20
3.6
2.8
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
C/W
1
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