Si1917EDH
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.370 @ V
GS
= –4.5 V
–12
0.575 @ V
GS
= –2.5 V
0.800 @ V
GS
= –1.8 V
I
D
(A)
–1.15
–0.92
–0.78
D
TrenchFETr Power MOSFETS: 1.8-V Rated
D
ESD Protected: 3000 V
D
Thermally Enhanced SC-70 Package
APPLICATIONS
D
Load Switching
D
PA Switch
D
Level Switch
D
D
SOT-363
SC-70 (6-LEADS)
S
1
1
6
D
1
Marking Code
DB
G
2
XX
YY
3 kW
G
Lot Traceability
and Date Code
Part # Code
G
3 kW
G
1
2
5
D
2
3
4
S
2
Top View
S
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 85_C
I
DM
I
S
–0.61
0.73
0.38
–55 to 150
–0.83
–3
–0.47
0.57
0.30
W
_C
–0.73
A
Symbol
V
DS
V
GS
5 secs
Steady State
–12
"12
Unit
V
–1.15
–1.00
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71414
S-03174—Rev. A, 07-Mar-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
130
170
80
Maximum
170
220
100
Unit
_C/W
C/W
1
Si1917EDH
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= –100
mA
V
DS
= 0 V, V
GS
=
"4.5
V
Gate-Body Leakage
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= –9.6 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= –9.6 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –1.0 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –2.5 V, I
D
= –0.81 A
V
GS
= –1.8 V, I
D
= –0.2 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –10 V, I
D
= –1.0 A
I
S
= –0.47 A, V
GS
= 0 V
–2
0.300
0.470
0.660
1.7
–0.85
–1.2
0.370
0.575
0.800
S
V
W
–0.45
"1.5
"10
–1
–5
V
mA
mA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –6 V, R
L
= 12
W
I
D
^
–0.5 A, V
GEN
= –4.5 V, R
G
= 6
W
V
DS
= –6 V, V
GS
= –4.5 V, I
D
= –1.0 A
1.3
0.31
0.31
0.17
0.47
0.96
1.0
0.26
0.71
1.4
1.5
ms
m
2.0
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10
10,000
1,000
I
GSS
– Gate Current (mA)
8
I
GSS
– Gate Current (
mA)
100
10
1
0.1
T
J
= 25_C
0.01
0
0
4
8
12
16
0.001
0
3
6
9
12
15
T
J
= 150_C
Gate Current vs. Gate-Source Voltage
6
4
2
V
GS
– Gate-to-Source Voltage (V)
www.vishay.com
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71414
S-03174—Rev. A, 07-Mar-01
2
Si1917EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
3.0
V
GS
= 5 thru 3 V
2.5
2.5 V
I
D
– Drain Current (A)
2.5
3.0
T
C
= –55_C
25_C
Vishay Siliconix
Transfer Characteristics
I
D
– Drain Current (A)
2.0
2.0
125_C
1.5
1.5
2V
1.0
1.5 V
1.0
0.5
0.5
0.0
0
1
2
3
4
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.2
V
GS
= 1.8 V
C – Capacitance (pF)
0.9
200
Capacitance
r
DS(on)
– On-Resistance (
W
)
160
C
iss
120
V
GS
= 2.5 V
0.6
80
C
oss
40
C
rss
V
GS
= 4.5 V
0.3
0.0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
12
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= –1.0 A
1.6
On-Resistance vs. Junction Temperature
3
r
DS(on)
– On-Resistance (
W)
(Normalized)
4
1.4
V
GS
= 4.5 V
I
D
= –1.0 A
1.2
2
1.0
1
0.8
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 71414
S-03174—Rev. A, 07-Mar-01
www.vishay.com
3
Si1917EDH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
3
2.0
On-Resistance vs. Gate-to-Source Voltage
1
r
DS(on)
– On-Resistance (
W
)
T
J
= 150_C
I
S
– Source Current (A)
1.6
1.2
I
D
= –1.0 A
0.8
T
J
= 25_C
0.4
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.3
I
D
= 100
mA
0.2
V
GS(th)
Variance (V)
5
Single Pulse Power, Junction-to-Ambient
4
0.1
Power (W)
3
0.0
2
–0.1
1
–0.2
–50
–25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
2. Per Unit Base = R
thJA
= 170_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71414
S-03174—Rev. A, 07-Mar-01
Si1917EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71414
S-03174—Rev. A, 07-Mar-01
www.vishay.com
5
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