Si2341DS
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
FEATURES
D
TrenchFETr Power MOSFETS
I
D
(A)
b
- 2.8
- 2.0
r
DS(on)
(W)
0.072 @ V
GS
= - 10 V
0.120 @ V
GS
= - 4.5 V
APPLICATIONS
D
Load Switch
D
PA Switch
TO-236
(SOT-23)
G
1
3
D
Ordering Information: Si2341DS-T1
S
2
Top View
Si2341DS (F1)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
- 0.75
0.9
0.57
- 55 to 150
Symbol
V
DS
V
GS
5 sec
- 30
"20
- 2.8
- 2.2
- 12
Steady State
Unit
V
- 2.5
- 2.0
A
- 0.6
0.71
0.45
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Ambient
c
Maximum Junction-to-Foot (Drain)
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t
v
5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72263
S-31675—Rev. B, 11-Aug-03
www.vishay.com
R
thJA
R
thJF
Symbol
Typical
115
140
60
Maximum
140
175
75
Unit
_C/W
1
Si2341DS
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
Drain Source On Resistance
a
Forward Transconductance
a
Diode Forward Voltage
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= - 10
mA
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= - 24 V, V
GS
= 0 V
V
DS
= - 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
v
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 2.8 A
V
GS
= - 4.5 V, I
D
= - 2.0 A
V
DS
= - 5 V, I
D
= - 2.8 A
I
S
= - 0.75 A, V
GS
= 0 V
-6
0.057
0.090
8.0
- 0.8
- 1.2
0.072
0.120
W
S
V
- 30
- 1.0
- 3.0
"100
-1
- 10
mA
A
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= - 15 V, V
GS
= 0, f = 1 MHz
V
DS
= - 15 V, V
GS
= - 10 V
I
D
^
- 2.8 A
9.5
1.5
2.5
400
95
70
pF
15
nC
Switching
c
t
d(on)
Turn-On
Turn On Time
t
r
t
d(off)
t
f
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
S
FaxBack 408-970-5600
V
DD
= - 15 V, R
L
=15
W
I
D
^
- 1 0 A V
GEN
= - 4.5 V
1.0 A,
45
R
G
= 6
W
7
15
20
20
15
25
ns
30
30
Turn-Off Time
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2
Document Number: 72263
S-31675—Rev. B, 11-Aug-03
Si2341DS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
12
Vishay Siliconix
Output Characteristics
V
GS
= 10 thru 5 V
12
Transfer Characteristics
T
C
= - 55_C
10
I D - Drain Current (A)
I D - Drain Current (A)
10
25_C
8
8
125_C
6
6
3V
4
4
2
2V
0
0
2
4
6
8
10
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
700
600
r DS(on)- On-Resistance (
W
)
0.12
V
GS
= 4.5 V
0.09
V
GS
= 10 V
0.06
C - Capacitance (pF)
500
400
300
200
Capacitance
C
iss
0.03
100
C
rss
0.00
0
2
4
6
8
10
0
0
5
10
C
oss
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 3 A
V GS - Gate-to-Source Voltage (V)
8
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3 A
1.4
r DS(on)- On-Resistance (
W
)
(Normalized)
0
2
4
6
8
10
6
1.2
4
1.0
2
0.8
0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 72263
S-31675—Rev. B, 11-Aug-03
www.vishay.com
3
Si2341DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
10
r DS(on)- On-Resistance (
W
)
0.8
I S - Source Current (A)
1.0
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
0.6
I
D
= 3 A
0.4
1
T
J
= 25_C
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.6
10
Single Pulse Power
0.4
V GS(th) Variance (V)
8
I
D
= 250
mA
Power (W)
0.2
6
0.0
4
T
A
= 25_C
Single Pulse
- 0.2
2
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
T
J
- Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
100.0
Limited
by r
DS(on)
10.0
I
D
- Drain Current (A)
10
ms
100
ms
1.0
1 ms
10 ms
0.1
T
A
= 25_C
Single Pulse
0.01
0.1
1
10
100 ms
dc, 100 s, 10 s, 1 s
100
V
DS
- Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 72263
S-31675—Rev. B, 11-Aug-03
4
Si2341DS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72263
S-31675—Rev. B, 11-Aug-03
www.vishay.com
5
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