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SI2341DS-T1

Description
P-Channel 30-V (D-S) MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size41KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SI2341DS-T1 Overview

P-Channel 30-V (D-S) MOSFET

SI2341DS-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)2.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.9 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Si2341DS
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
FEATURES
D
TrenchFETr Power MOSFETS
I
D
(A)
b
- 2.8
- 2.0
r
DS(on)
(W)
0.072 @ V
GS
= - 10 V
0.120 @ V
GS
= - 4.5 V
APPLICATIONS
D
Load Switch
D
PA Switch
TO-236
(SOT-23)
G
1
3
D
Ordering Information: Si2341DS-T1
S
2
Top View
Si2341DS (F1)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
- 0.75
0.9
0.57
- 55 to 150
Symbol
V
DS
V
GS
5 sec
- 30
"20
- 2.8
- 2.2
- 12
Steady State
Unit
V
- 2.5
- 2.0
A
- 0.6
0.71
0.45
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Ambient
c
Maximum Junction-to-Foot (Drain)
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t
v
5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72263
S-31675—Rev. B, 11-Aug-03
www.vishay.com
R
thJA
R
thJF
Symbol
Typical
115
140
60
Maximum
140
175
75
Unit
_C/W
1

SI2341DS-T1 Related Products

SI2341DS-T1 SI2341DS
Description P-Channel 30-V (D-S) MOSFET P-Channel 30-V (D-S) MOSFET
Is it Rohs certified? incompatible incompatible
Maker Vishay Vishay
Reach Compliance Code unknow compli
Configuration Single SINGLE WITH BUILT-IN DIODE
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type P-CHANNEL P-CHANNEL
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) TIN LEAD
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