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SS23

Description
2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC
CategoryDiscrete semiconductor    diode   
File Size141KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC

SS23 Parametric

Parameter NameAttribute value
Parts packaging codeSMB
Manufacturer packaging codeSMB
SS22-SS210
Surface Mount Schottky Barrier Rectifiers
REVERSE VOLTAGE: 20 - 100 V
FORWARD CURRENT: 2.0 A
(DO-214AA)SMB
4.7± 0.25
Features
2.0± 0.15
Schottky barrier rectifier
Guardring protection
Low forward voltage
Reverse energy tested
High current capability
Extremely low thermal resistance
5.4± 0.2
Mechanical Data
Case: SMB molded plastic body
1111
Polarity: Color band denotes cathode end
Mounting position: ANY
Weight: 0.003 ounces, 0.093 gram
2.3± 0.15
1.3± 0.2
0.203MAX
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
Device marking code
SS22
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
R
JL
SS23 SS24 SS25 SS26
30
21
30
40
28
40
2.0
75
50
35
50
60
42
60
SS28 SS29 SS210
UNITS
80
56
80
90
63
90
1.5
100
70
100
V
V
V
A
A
-
V
mA
o
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at
T
L
=90
Peak forward surge current 8.3ms single
half-sine-wave
Maximum instantaneous forward voltage
@I
F
=2.0A
(NOTE1)
@I
F
=1.0A
Maximum DC reverse current
T
J
=25
at rated DC blocking voltage T =125
J
Maximum thermal resistance
Operating temperature range
Storage temperature range
20
14
20
0.50
-
0.4
10
0.70
-
0.75
0.03
5.0
28
-55 ---- +125
-55 ---- +150
3.6± 0.3
0.2± 0.05
C/W
o
o
T
J
T
STG
C
C
NOTE: 1.Pulse test: Pulse width 300us,duty cycle 1 %
http://www.luguang.cn
mail:lge@luguang.cn

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