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SS34

Description
3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size71KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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SS34 Overview

3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB

SS34 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMC, 2 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage40 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current100 A
SS32 THRU SS3200
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
Forward Current - 3.0 Amperes
DO-214AB/SMC
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.126 (3.20)
0.114 (2.90)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.06)
MECHANICAL DATA
0.008(0.203)MAX.
0.060(1.52)
0.030(0.76)
0.320(8.13)
0.305(7.75)
Case:
JEDEC DO-214AB molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.007
ounce, 0.25grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SS32 SS33
SS34 SS35
SS36
SS38 SS310 SS3150 SS3200
UNITS
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
3.0
80
56
80
100
70
100
150
105
150
200
150
200
VOLTS
VOLTS
VOLTS
Amps
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
500
0.55
20
100.0
0.70
0.5
10
300
55.0
-50 to +125
-50 to +150
-50 to +150
0.85
0.95
0.2
2.0
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC

SS34 Related Products

SS34 SS3150 SS32C SS33 SS35 SS36 SS38
Description 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AC

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Index Files: 350  1949  2699  1639  1101  8  40  55  33  23 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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