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STPRF1630CT

Description
16 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size96KB,2 Pages
ManufacturerSIRECT
Websitehttp://www.sirectsemi.com/
Download Datasheet View All

STPRF1630CT Overview

16 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB

STPRF1630CT thru STPRF1640CT
Ultra Fast Recovery Diodes
Dimensions TO-220AB
A
C(TAB)
A
C
A
C
A
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
STPRF1630CT
300
STPRF1640CT
400
V
RMS
V
210
280
V
DC
V
300
400
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Symbol
I
(AV)
I
FSM
V
F
I
R
C
J
T
RR
R
OJC
Characteristics
Maximum Average Forward Rectified Current
@T
C
=100
o
C
Maximum Ratings
16
125
1.3
@T
J
=25
o
C
@T
J
=100
o
C
5
500
110
50
1.5
-55 to +150
Unit
A
A
V
uA
pF
ns
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 8.0A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance Per Element (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
C/W
o
T
J
, T
STG
Operating And Storage Temperature Range
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
3. Thermal Resistance Junction To Case.
C
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
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