TPCP8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPCP8302
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON-resistance: R
DS(ON)
= 25 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 14 S (typ.)
Low leakage current: I
DSS
=
−10 μA
(max) (V
DS
=
−20
V)
Enhancement mode: V
th
=
−0.4
to
−1.0
V (V
DS
=
−6
V, I
D
=
−1
mA)
Unit: mm
0.33±0.05
0.05
M
A
8
5
2.4±0.1
0.475
1
4
0.65
2.9±0.1
B
A
0.05
M
B
0.8±0.05
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
P
D (2)
P
D (1)
P
D (2)
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−20
−20
±12
−5
−20
1.48
1.23
W
0.58
0.36
6.5
−5
0.12
150
−55
to 150
mJ
A
mJ
°C
°C
Unit
V
V
V
A
S
0.025
S
0.17±0.02
0.28
+0.1
-0.11
+0.13
1.12
-0.12
1.12
+0.13
-0.12
0.28
+0.1
-0.11
Single-device operation
Drain power
(Note 3a)
dissipation
(t
=
5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Drain power
dissipation
(t
=
5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
(Note 4)
Single-device operation
(Note 3a)
1. Source1
2. Gate1
3. Source2
4. Gate2
5. Drain2
6. Drain2
7. Drain1
8. Drain1
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-3V1G
Weight: 0.017 g (typ.)
Note: For Notes 1 to 6, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
8
7
6
5
Marking
(Note 6)
8
7
6
5
8302
*
1
2
3
4
1
2
3
4
Lot No.
1
2008-12-21
2.8±0.1
TPCP8302
Thermal Characteristics
Characteristic
Single-device operation
Thermal resistance,
(Note 3a)
channel to ambient
(t
=
5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Thermal resistance,
(Note 3a)
channel to ambient
(t
=
5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Symbol
R
th (ch-a) (1)
R
th (ch-a) (2)
R
th (ch-a) (1)
R
th (ch-a) (2)
Max
84.5
°C/W
101.6
215.5
°C/W
347.2
Unit
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
25.4
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
(a)
25.4
(b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is applied to both devices evenly.).
Note 4: V
DD
= −16
V, T
ch
=
25°C (initial), L
=
0.2 mH, R
G
=
25
Ω,
I
AR
= −5
A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6:
●
on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
2
2008-12-21
TPCP8302
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
Drain-source ON-resistance
R
DS (ON)
R
DS (ON)
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge1
Gate-drain (“Miller”) charge
t
f
t
off
Q
g
Q
gs1
Q
gd
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
4.7
Ω
V
GS
0V
-5V
RL
=
4Ω
Test Condition
V
GS
= ±10
V, V
DS
=
0 V
V
DS
= −20
V, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
12 V
V
DS
= −6
V, I
D
= −1
mA
V
GS
= −1.8
V, I
D
= −0.3
A
V
GS
= −2.5
V, I
D
= −2.5A
V
GS
= −4
V, I
D
= −2.5A
V
DS
= −10
V, I
D
= −2.5A
V
DS
= −10
V, V
GS
=
0 V, f
=
1 MHz
Min
⎯
⎯
−20
−8
−0.4
⎯
⎯
⎯
7
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
50
33
25
14
1500
220
240
10
20
65
200
20
3.6
5.1
Max
±10
−10
⎯
⎯
−1.0
95
45
33
⎯
⎯
⎯
⎯
⎯
⎯
Unit
μA
μA
V
V
mΩ
S
pF
I
D
= −2.5A
OUT
⎯
⎯
⎯
⎯
⎯
ns
⎯
⎯
⎯
⎯
⎯
nC
V
DD
≈ −10
V
Duty
≤
1%, t
w
=
10
μs
V
DD
≈ −16
V, V
GS
= −5
V,
I
D
= −5
A
⎯
⎯
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
I
DRP
V
DSF
Test Condition
⎯
I
DR
= −5
A, V
GS
=
0 V
Min
⎯
⎯
Typ.
⎯
⎯
Max
−20
1.2
Unit
A
V
3
2008-12-21
TPCP8302
I
D
– V
DS
−10
−10
V
−2
V
−1.8
V
−2.2
V
−2.5
V
−3
V
−4
V
−1.4
V
−2
VGS
= −1.2
V
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
0
0
−0.4
Common source
Ta
=
25°C
Pulse test
−20
−10
V
−16
I
D
– V
DS
−2.5
V
−2.2
V
−3
V
−4
V
−6
V
Common source
Ta
=
25°C
Pulse test
−2
V
(A)
I
D
−6
I
D
−1.6
V
(A)
−8
−12
Drain current
−4
−6
V
Drain current
−1.8
V
−8
−1.6
V
−4
−1.4
V
VGS
= −1.2V
−0.8
−1.2
−1.6
−2.0
Drain−source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
−12
V
DS
– V
GS
−1.2
V
DS
(V)
−10
Common source
VDS
= −10
V
Pulse test
−1.0
Common source
Ta
=
25°C
Pulse test
(A)
I
D
−8
−0.8
Drain−source voltage
Drain current
−6
−0.6
−4
25°C
−2
100°C
Ta
= −55°C
−0.4
ID
= −5
A
−1.3
A
−0.2
−2.5
A
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
0
0
−2
−4
−6
−8
−10
Gate−source voltage
V
GS
(V)
Gate−source voltage
V
GS
(V)
|Y
fs
| – I
D
(S)
100
1000
Common source
Ta
=
25°C
Pulse test
R
DS (ON)
– I
D
|Y
fs
|
Forward transfer admittance
10
Ta
= −55°C
Drain−source ON-resistance
R
DS (ON)
(mΩ)
100°C
100
VGS
= −1.8
V
−2.5
V
−4
V
25°C
1
−0.1
Common source
VDS
= −10
V
Pulse test
−1
−10
10
−0.1
−1
−10
Drain current
I
D
(A)
Drain current
I
D
(A)
4
2008-12-21
TPCP8302
R
DS (ON)
– Ta
100
I
DR
– V
DS
−100
Drain-source ON-resistance
R
DS (ON)
(mΩ)
80
ID
= −2.5
A
(A)
Common source
Pulse test
ID
= −5
A
I
DR
−5
V
−10
−3
V
−1
V
VGS
= −1.8
V
40
VGS
= −2.5
V
20
VGS
= −4
V
0
−80
ID
= −1.3
A
Drain reverse current
60
−1
VGS
=
0 V
1V
Common source
Ta
=
25°C
Pulse test
−0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
−40
0
40
80
120
160
Ambient temperature
Ta
(
°
C)
Drain−source voltage
V
DS
(V)
Capacitance – V
DS
10000
V
th
– Ta
−1.2
V
th
(V)
Gate threshold voltage
Common source
Ta
=
25°C
VGS
=
0 V
f
=
1 MHz
−1.0
(pF)
−0.8
C
Ciss
1000
Capacitance
−0.6
−0.4
Common source
VDS
= −6
V
ID
= −1mA
Pulse test
−40
0
40
80
120
160
Coss
Crss
100
−0.1
−1
−10
−100
−0.2
0
−80
Drain−source voltage
V
DS
(V)
Ambient temperature
Ta
(
°
C)
P
D
– Ta
2.0
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t
=
5s
Dynamic input/output
characteristics
−20
V
DS
(V)
−16
VDS
VDD
= −16
V
P
D
Common source
ID
= −5
A
Ta
=
25°C
Pulse test
−10
(W)
−8
1.5
(1)
(2)
Drain power dissipation
Drain−source voltage
1.0
−8
−8
V
−4
V
VDD
= −16
V
−4
0.5
(3)
(4)
−4
−4
V
−2
0
0
40
80
120
160
200
0
0
10
20
0
30
Ambient temperature
Ta
(
°
C)
Total gate charge
Q
g
(nC)
5
2008-12-21
Gate−source voltage
−12
−8
V
VGS
−6
V
GS
(V)
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