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UF1000FCT

Description
10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size36KB,2 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
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UF1000FCT Overview

10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB

DATA SHEET
SEMICONDUCTOR
UF1000FCT~UF1008FCT
ISOLATION UL TRAFAST SWITCHING RE CTIFIERS
VOLTAGE- 50 to 800 Volts CURRENT - 10.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
Exceeds environmental standards of
MIL-S-19500/228
Low power loss, high efficiency.
Low forwrd voltge, high current capability
High surge capacity.
Ultra fast recovery times, high voltage.
High temperature soldering : 260
O
C / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.114(2.9)
.098(2.5)
.032(0.8)
MAX
.161(4.1)
MAX
ITO-220AB
.185(4.8)
MAX
Unit:inch(mm)
.406(10.3)MAX
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
.130(3.3)
MAX
.112(2.85)
.100(2.55)
.606(15.4)
.583(14.8)
.055(1.4)
MAX
.035(0.9)
MAX
.543(13.8)
.512(13.0)
MECHANCALDATA
Case: ITO-220AB full molded plastic package
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
.
Weight: 0.08 ounces, 2.26grams.
.100(2.55)
.100(2.55)
AC
Positive CT
AC
+
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
UF
UF
UF
UF
UF
UF
UF
1000FCT 1001FCT 1002FCT 1003FCT 1004FCT 1006FCT 1008FCT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maxi mum DC Blocki ng Voltage
Maximum Averag e Forward Rectif ied Current at Tc=100°C
Peak Forward Surge Current ,
8.3 ms single half sine- wave
super imposed on rated load (J EDEC method)
Maximum I nstantaneous Forward Vol tage
at 5.0A per element
Maxi mum DC Reverse Cur rent (Note 1)
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance Note RθJC
Oper ating and Storage Temperature Range T
J
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted.
Ta=25°C
Ta=125°C
50
50
15
-55 to +150
1.0
10
500
100
75
1.30
1.70
125
50
35
50
100
70
100
200
140
200
300
210
300
10
400
280
400
600
420
600
800
560
800
UNITS
V
V
V
A
A
V
µA
pF
ns
°C/W
°C
http://www.yeashin.com
1
REV.02 20110725

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UF1000FCT UF1003FCT UF1004FCT UF1006FCT UF1001FCT UF1002FCT UF1008FCT
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