DATA SHEET
SEMICONDUCTOR
UF1000FCT~UF1008FCT
ISOLATION UL TRAFAST SWITCHING RE CTIFIERS
VOLTAGE- 50 to 800 Volts CURRENT - 10.0 Ampere
FEATURES
•
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
•
Exceeds environmental standards of
MIL-S-19500/228
•
Low power loss, high efficiency.
•
Low forwrd voltge, high current capability
•
High surge capacity.
•
Ultra fast recovery times, high voltage.
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.114(2.9)
.098(2.5)
.032(0.8)
MAX
.161(4.1)
MAX
ITO-220AB
.185(4.8)
MAX
Unit:inch(mm)
.406(10.3)MAX
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
.130(3.3)
MAX
.112(2.85)
.100(2.55)
.606(15.4)
.583(14.8)
.055(1.4)
MAX
.035(0.9)
MAX
.543(13.8)
.512(13.0)
MECHANCALDATA
•
Case: ITO-220AB full molded plastic package
•
Terminals: Lead solderable per MIL-STD-202, Method 208
•
Polarity: As marked.
•
Standard packaging: Any
.
•
Weight: 0.08 ounces, 2.26grams.
.100(2.55)
.100(2.55)
AC
Positive CT
AC
+
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
UF
UF
UF
UF
UF
UF
UF
1000FCT 1001FCT 1002FCT 1003FCT 1004FCT 1006FCT 1008FCT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maxi mum DC Blocki ng Voltage
Maximum Averag e Forward Rectif ied Current at Tc=100°C
Peak Forward Surge Current ,
8.3 ms single half sine- wave
super imposed on rated load (J EDEC method)
Maximum I nstantaneous Forward Vol tage
at 5.0A per element
Maxi mum DC Reverse Cur rent (Note 1)
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance Note RθJC
Oper ating and Storage Temperature Range T
J
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted.
Ta=25°C
Ta=125°C
50
50
15
-55 to +150
1.0
10
500
100
75
1.30
1.70
125
50
35
50
100
70
100
200
140
200
300
210
300
10
400
280
400
600
420
600
800
560
800
UNITS
V
V
V
A
A
V
µA
pF
ns
°C/W
°C
http://www.yeashin.com
1
REV.02 20110725
RATINGAND CHARACTERIS TICCURVES
UF1000FCT~UF1008FCT
t
rr
+0.5A
50
Noninductive
10
Noninductive
(-)
0
-0.25
(+)
25Vdc
(approx)
(-)
PULSE
GENERATOR
NOTE 2
1
Non
inductive
(+)
OSCILLOSCCOPE
NOTE 1
NOTES:
1.Rise T
ime=7ns m
ax
Input Impedance=1 m
egohm. 22pF
-1.0
SET TIME BASE
FOR10ns/cm
2. Rise T
ime=10ns m
ax.
Source Impedance = 5 O
0 hms
1cm
Fig.1-REVERSERECOVERY TIME CHARACTERISTIC AND TEST CIRCUITDIAGRAM
100
AV E R A G F O R A R DC U R R E N T
E W
12.5
10.0
7.5
5.0
2.5
0
0
150
300-400V
INSTANEOUS F RWARD C URRENT,(A)
O
10
50-200V
600-800V
1
50
100
CASE TEMPERATURE,
O
C
0.1
T=25
O
C
J
Fig.3-FORWARD CURRENTDERA
TING CURVE
FORWARD SURGE C RRENT, AMPERES
U
140
120
100
80
0.01
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD V
OLTAGE , VOLTS
Fig. 2- FORWARD CHARACTERISTICS
1000
60
40
20
IR- REVERSE L AKAG E CURRENT M IC RO AM PERES
E
.
100
T
J
= 125 C
O
1
NUMBER O F C
YCLES AT 60Hz
10
100
Fig.4-PEAK FORWARD SURGE CURRENT
240
10
C A PA C I T N C E ,p F
A
200
160
120
80
40
0
1
2
5
10
20
50 100 200
500
T
J
= 25 C
O
1.0
T
J
= 25 C
O
0.1
20
40
60
80
100
120
140
REVERSE VOLTAGE, OLTS
V
Fig.5- TYPICAL REVERSE CHARACTERISTICS
http://www.yeashin.com
2
%o f PIV. VOLTS
Fig.6-TYPICAL JUNCTION CAPACIT ANCE
REV.02 20110725
Embedded System
京公网安备 11010802033920号
EEWORLD
