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UF10DCT

Description
5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size157KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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UF10DCT Overview

5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB

New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Rectifier
TO-220AB
ITO-220AB
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, IT-220AB)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB and TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
2
U10xCT
PIN 1
PIN 3
PIN 2
CASE
3
1
UF10xCT
PIN 1
PIN 3
PIN 2
2
3
1
TO-263AB
K
2
1
UB10xCT
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
5Ax2
100 V, 150 V, 200 V
55 A
25 ns
0.89 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Max. average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 kΩ (contact mode)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min per diode
Operating junction and storage temperature range
total device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
V
C
V
AC
T
J
, T
STG
U(F,B)10BCT
100
U(F,B)10CCT
150
10
5
55
8
1500
- 55 to + 150
U(F,B)10DCT
200
UNIT
V
A
A
kV
V
°C
Document Number: 88967
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

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Description 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB dual common-cathode ultrafast rectifier dual common-cathode ultrafast rectifier dual common-cathode ultrafast rectifier dual common-cathode ultrafast rectifier
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