1N4681-1N4717
Zener Diode
DO-35(GLASS)
Features
♦
Silicon Planar Zener Diodes
♦
Standard Zener voltage tolerance is ± 5%.
Other tolerances are available
upon request.
♦
High temperature soldering guaranteed:
250°C/10 seconds, 0.375” (9.5mm) lead length.
♦
These diodes are also available in SOD-123 case
with the type designation MMSZ4681...MMSZ4717
and SOT-23 case with the type designation
MMBZ4681...MMBZ4717.
Dimensions in millimeters
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
Terminals:
Solderable, per MIL-STD-750, method 2026.
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at T
L
= 75°C, 3/8” from case
Maximum Junction Temperature
Storage Temperature Range
P
tot
T
j
T
S
500
175
– 65 to +175
mW
°C
°C
SYMBOL
MIN.
MAX.
UNIT
Thermal Resistance
Junction to Ambient Air
Forward Voltage
at I
F
= 100 mA
R
ΘJA
–
300
(1)
°C/W
V
F
–
1.5
Volts
NOTES:
(1) Valid provided that leads at a distance of 3/8” mm from case are kept at ambient temperature.
http://www.luguang.cn
mail:lge@luguang.cn
1N4681-1N4717
Zener Diode
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified.)
Zener Voltage
(1)
V
Z
@ l
z
= 50µA (Volts)
Max Reverse
Current I
R
(µA)
7.5
5.0
4.0
2.0
1.0
0.8
7.5
7.5
5.0
4.0
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
Test Voltage
V
R
(Volts)
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.0
2.0
3.0
3.0
4.0
5.0
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19.0
20.4
21.2
22.8
25.0
27.3
29.6
32.6
Max Zener
Current
I
ZM
(mA)
Type
1N4678
1N4679
1N4680
1N4681
1N4682
1N4683
1N4684
1N4685
1N4686
1N4687
1N4688
1N4689
1N4690
1N4691
1N4692
1N4693
1N4694
1N4695
1N4696
1N4697
1N4698
1N4699
1N4700
1N4701
1N4702
1N4703
1N4704
1N4705
1N4706
1N4707
1N4708
1N4709
1N4710
1N4711
1N4712
1N4713
1N4714
1N4715
1N4716
1N4717
Nominal
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
Min
1.71
1.90
2.09
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.27
8.65
9.50
10.5
11.4
12.4
13.3
14.3
15.2
16.2
17.1
18.1
19.0
20.9
22.8
23.8
25.7
26.6
28.5
31.4
34.2
37.1
40.9
Max
1.89
2.10
2.31
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.14
9.56
10.5
11.6
12.6
13.7
14.7
15.8
16.8
17.9
18.9
20.0
21.0
23.1
25.2
26.3
28.4
29.4
31.5
34.7
37.8
41.0
45.2
Max Voltage Change
∆V
Z
(Volts)
(2)
0.70
0.70
0.75
0.80
0.85
0.90
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.90
0.75
0.50
0.10
0.08
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.22
0.24
0.25
0.27
0.28
0.30
0.33
0.36
0.39
0.43
120
110
100
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
35.0
31.8
29.0
27.4
26.2
24.8
21.6
20.4
19.0
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
NOTES:
(1) Tested with pulses, t
p
= 5ms
(2)
∆V
Z
is the difference between V
Z
at 100µA and at 10µA.
http://www.luguang.cn
mail:lge@luguang.cn
Embedded System
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