CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N5400G THRU 1N5408G
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V
CURRENT：3.0A
FEATURES
·High
reliability
·Low
leakage
·Low
forward voltage drop
·High
current capability
DO-27
1.0(25.4)
MIN.
.375(9.5)
.335(8.5)
.052(1.3)
.048(1.2)
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
1.18 grams
.220(5.6)
.187(5.0)
1.0(25.4)
MIN.
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
1N5400 1N5401 1N540 1N5404 1N5406 1N540 1N5408
units
G
G
2G
G
G
7G
G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
.375”(9.5mm) lead length at T
L
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 3.0A
DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
=25°C
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
50
35
50
100
70
100
200
140
200
400
280
400
3.0
150
1.1
5.0
500
30
40
30
pF
°C/W
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
@ T
A
=100°C
I
R
Maximum Full Load Reverse Current Average,
Full Cycle .375”(9.5mm) lead length at T
L
=75°C
C
J
Typical Junction Capacitance (Note)
R
θJA
Typical Thermal Resistance
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
µA
１
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