1N5400G datasheet, PDF - EEWORLD Datasheet

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1N5400G: Description3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD; Categorysemiconductor Discrete semiconductor; File Size36KB，1 Pages; ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.

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1N5400G Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5400G Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	PLASTIC PACKAGE-2
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	MATTE Tin
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	50 V
Maximum average forward current	3 A
Maximum non-repetitive peak forward current	150 A

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

1N5400G THRU 1N5408G

TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER

VOLTAGE：50-1000V

CURRENT：3.0A

FEATURES

·High

reliability

·Low

leakage

·Low

forward voltage drop

·High

current capability

DO-27

1.0(25.4)

MIN.

.375(9.5)

.335(8.5)

.052(1.3)

.048(1.2)

DIA.

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Lead:

MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color

band denotes cathode end

·Mounting

position:

Any

·Weight:

1.18 grams

.220(5.6)

.187(5.0)

1.0(25.4)

MIN.

DIA.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

1N5400 1N5401 1N540 1N5404 1N5406 1N540 1N5408

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

.375”(9.5mm) lead length at T

=75°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum Instantaneous forward Voltage at 3.0A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ T

=25°C

RRM

RMS

FSM

100

200

140

200

400

280

400

3.0

150

1.1

5.0

500

°C/W

600

420

600

800

560

800

1000

700

1000

@ T

=100°C

Maximum Full Load Reverse Current Average,

Full Cycle .375”(9.5mm) lead length at T

=75°C

Typical Junction Capacitance (Note)

θJA

Typical Thermal Resistance

Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts

µA

１

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1N5400G Related Products

	1N5400G	1N5404G	1N5407G	1N5401G	1N5402G	1N5406G	1N5408G
Description	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 800 V, SILICON, RECTIFIER DIODE	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE	3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
state	ACTIVE	-	ACTIVE	-	-	ACTIVE	CONSULT MFR
Diode type	rectifier diode	-	RECTIFIER DIODE	-	-	rectifier diode	rectifier diode

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