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1N5620GP

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC
CategoryDiscrete semiconductor    diode   
File Size73KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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1N5620GP Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC

1N5620GP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage880 V
Maximum reverse recovery time2 µs
surface mountNO
Base Number Matches1
1N5614GP thru 1N5622GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
FEATURES
SUPERECTIFIER
®
• Superectifier
application
structure
for
high
reliability
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, I
R
less than 0.1 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
DO-204AC (DO-15)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
1.0 A
200 V to 1000 V
50 A
0.5 μA
1.2 V
175 °C
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
MECHANICAL DATA
Case:
DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 55 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
Note
(1)
JEDEC registered values
SYMBOL
V
RRM (1)
V
RMS
V
DC (1)
I
F(AV)
I
FSM (1)
T
J
, T
STG (1)
1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP
200
140
200
400
280
400
600
420
600
1.0
50
- 65 to + 175
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
°C
Document Number: 88520
Revision: 15-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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