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1N5818

Description
1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
Categorysemiconductor    Discrete semiconductor   
File Size157KB,2 Pages
ManufacturerKingtronics
Websitehttp://www.kingtronics.com
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1N5818 Overview

1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL

1N5818 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, DO-41, 2 PIN
stateTRANSFERRED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage30 V
Maximum average forward current1 A
Website: www.kingtronics.com
Email: info@kingtronics.com
Tel: (852) 8106 7033
Fax: (852) 8106 7099
1N5817 THRU 1N5819
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 40Volts
Forward Current -
1.0 Ampere
FEATURES
◆Plastic
package has Underwriters Laboratory Flammability Classification 94V-0
◆Metal
silicon junction,majority carrier conduction
◆Guardring
for overvoltage protection
◆Low
power loss,high efficiency
◆High
current capability,low forward voltage drop
◆High
surge capability
◆For
use in low voltage,high frequency inverters,free wheeling,and polarity protection applications
◆High
temperature soldering guaranteed:
250℃/10 seconds,0.375
(9.5mm) lead length,5 lbs. (2.3kg) tension
MECHANICAL DATA
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.012
ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.
SYMBOLS
Maximum repetitive peak reverse voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TL=90℃
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current TA=25℃
at rated DC blocking voltage TA=100℃
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
1N5817
1N5818
1N5819
UNITS
VOLTS
VOLTS
VOLTS
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
1.0
40
28
40
Amp
I
FSM
V
F
I
R
C
J
R
θJA
T
J
,T
STG
0.450
25.0
Amps
0.550
1.0
10.0
110.0
50.0
-65 to +125
0.600
Volts
mA
p
F
/W
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
1

1N5818 Related Products

1N5818 1N5817 1N5819
Description 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL RECTIFIER DIODE,SCHOTTKY,20V V(RRM),DO-41 1 A, 45 V, SILICON, SIGNAL DIODE
state TRANSFERRED CONSULT MFR DISCONTINUED
Diode type Signal diode rectifier diode Signal diode
Number of terminals 2 - 1
Number of components 1 - 1
Processing package description Plastic, DO-41, 2 PIN - DIE-2
packaging shape round - SQUARE
Package Size LONG FORM - UNCASED chip
Terminal form Wire - NO
Terminal location AXIAL - UPPER
Packaging Materials Plastic/Epoxy - UNSPECIFIED
Craftsmanship SCHOTTKY - SCHOTTKY
structure single - single
Shell connection isolation - isolation
Diode component materials silicon - silicon
Maximum repetitive peak reverse voltage 30 V - 45 V
Maximum average forward current 1 A - 1 A

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