1N5819 datasheet, PDF - EEWORLD Datasheet

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1N5819: Description1 A, 45 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size157KB，2 Pages; ManufacturerKingtronics; Websitehttp://www.kingtronics.com

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1N5819 Overview

1 A, 45 V, SILICON, SIGNAL DIODE

1N5819 Parametric

Parameter Name	Attribute value
Number of terminals	1
Number of components	1
Processing package description	DIE-2
state	DISCONTINUED
packaging shape	SQUARE
Package Size	UNCASED chip
surface mount	Yes
Terminal form	NO
terminal coating	tin lead
Terminal location	UPPER
Packaging Materials	UNSPECIFIED
Craftsmanship	SCHOTTKY
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum repetitive peak reverse voltage	45 V
Maximum average forward current	1 A

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Website: www.kingtronics.com

Email: info@kingtronics.com

Tel: (852) 8106 7033

Fax: (852) 8106 7099

1N5817 THRU 1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage -

20 to 40Volts

Forward Current -

1.0 Ampere

FEATURES

◆Plastic

package has Underwriters Laboratory Flammability Classification 94V-0

◆Metal

silicon junction,majority carrier conduction

◆Guardring

for overvoltage protection

◆Low

power loss,high efficiency

◆High

current capability,low forward voltage drop

◆High

surge capability

◆For

use in low voltage,high frequency inverters,free wheeling,and polarity protection applications

◆High

temperature soldering guaranteed:

250℃/10 seconds,0.375

”

(9.5mm) lead length,5 lbs. (2.3kg) tension

MECHANICAL DATA

Case:

JEDEC DO-41 molded plastic body

Terminals:

Plated axial leads, solderable per MIL-STD-750,Method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:0.012

ounce, 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

℃

ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.

SYMBOLS

Maximum repetitive peak reverse voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TL=90℃

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current TA=25℃

at rated DC blocking voltage TA=100℃

Typical junction capacitance (NOTE 1)

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

1N5817

1N5818

1N5819

UNITS

VOLTS

RRM

RMS

(AV)

1.0

Amp

FSM

θJA

STG

0.450

25.0

Amps

0.550

1.0

10.0

110.0

50.0

-65 to +125

0.600

Volts

℃

Note:

1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

1N5819 Related Products

	1N5819	1N5817	1N5818
Description	1 A, 45 V, SILICON, SIGNAL DIODE	RECTIFIER DIODE,SCHOTTKY,20V V(RRM),DO-41	1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
state	DISCONTINUED	CONSULT MFR	TRANSFERRED
Diode type	Signal diode	rectifier diode	Signal diode
Number of terminals	1	-	2
Number of components	1	-	1
Processing package description	DIE-2	-	Plastic, DO-41, 2 PIN
packaging shape	SQUARE	-	round
Package Size	UNCASED chip	-	LONG FORM
Terminal form	NO	-	Wire
Terminal location	UPPER	-	AXIAL
Packaging Materials	UNSPECIFIED	-	Plastic/Epoxy
Craftsmanship	SCHOTTKY	-	SCHOTTKY
structure	single	-	single
Shell connection	isolation	-	isolation
Diode component materials	silicon	-	silicon
Maximum repetitive peak reverse voltage	45 V	-	30 V
Maximum average forward current	1 A	-	1 A

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