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1N5818_08

Description
1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
Categorysemiconductor    Discrete semiconductor   
File Size77KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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1N5818_08 Overview

1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL

1N5818
Vishay High Power Products
Schottky Rectifier, 1.0 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
Cathode
Anode
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DO-204AL
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
1.0 A
30 V
12 mA at 125 °C
DESCRIPTION
The 1N5818 axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
1 Apk, T
J
= 25 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
1.0
30
225
0.55
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
1N5818
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 90 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
1.0
225
35
A
UNITS
Document Number: 93256
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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