1N5819 datasheet, PDF - EEWORLD Datasheet

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1N5819: Description1 A, 45 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size190KB，2 Pages; ManufacturerPFS; Websitehttp://www.ps-pfs.com/ENG/main.asp

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1N5819 Overview

1 A, 45 V, SILICON, SIGNAL DIODE

1N5819 Parametric

Parameter Name	Attribute value
Number of terminals	1
Number of components	1
Processing package description	DIE-2
state	DISCONTINUED
packaging shape	SQUARE
Package Size	UNCASED chip
surface mount	Yes
Terminal form	NO
terminal coating	tin lead
Terminal location	UPPER
Packaging Materials	UNSPECIFIED
Craftsmanship	SCHOTTKY
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum repetitive peak reverse voltage	45 V
Maximum average forward current	1 A

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SCHOTTKY BARRIER RECTIFIER

1N5817

THRU

1N5819

VOLTAGE RANGE

CURRENT

Volts

1.0

Ampere

FEATURES

Fast

switching.

Low

forward voltage, high current capability.

Low

power loss, high efficiency.

High

current surge capability.

High

temperature soldering guaranteed:

250/10 seconds, 0.375" (9.5mm) lead length

at 5 lbs. (2.3kg) tension.

MECHANICAL DATA

Case:

Transfer molded plastic

Epoxy:

UL94V - 0 rate flame retardant.

Polarity: Color band denoted cathode end.

Lead:

Plastic axial lead, solderable per MIL - STD - 202E

method 208C

Mounting

position : Any

Weight:

0.012 ounce, 0.33 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings

at 25 ambient temperature unless otherwise specified

Single

phase, half wave, 60Hz, resistive or inductive load.

For

capacitive load derate current by 20%

SYMBOLS

RRM

RMS

(AV)

1N5817

1N5818

(-55 to +125)

1N5819

UNIT

Volts

Amp

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

0.375" (9.5mm) Lead length at T

= 90

Peak Forward Surge Current

8.3ms single half sine - wave superimposed on

rated load (JEDEC method )

Maximum Instantaneous Forward

1.0A

Voltage (Note 1) at

3.0A

Maximum DC Reverse Current at rated T

= 25

DC blocking voltage (Note 1)

Typical Junction Capacitance (Note 2 )

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

NOTES:

1. Pulse test: 300

pulse width, 1% duty cycle.

2. Measured at 1MHz and applied reverse voltage of 4.0 volts.

FSM

, T

STG

Amps

Volts

3. Thermal resistance from junction to ambient P.C.B. mounted with 0.375" (9.5mm) lead length with 1.5" x 1.5"

(38 X 38mm) copper pads.

Web Site:

WWW.PS-PFS.COM

1N5819 Related Products

	1N5819	1N5817	1N5818
Description	1 A, 45 V, SILICON, SIGNAL DIODE	RECTIFIER DIODE,SCHOTTKY,20V V(RRM),DO-41	1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
state	DISCONTINUED	CONSULT MFR	TRANSFERRED
Diode type	Signal diode	rectifier diode	Signal diode
Number of terminals	1	-	2
Number of components	1	-	1
Processing package description	DIE-2	-	Plastic, DO-41, 2 PIN
packaging shape	SQUARE	-	round
Package Size	UNCASED chip	-	LONG FORM
Terminal form	NO	-	Wire
Terminal location	UPPER	-	AXIAL
Packaging Materials	UNSPECIFIED	-	Plastic/Epoxy
Craftsmanship	SCHOTTKY	-	SCHOTTKY
structure	single	-	single
Shell connection	isolation	-	isolation
Diode component materials	silicon	-	silicon
Maximum repetitive peak reverse voltage	45 V	-	30 V
Maximum average forward current	1 A	-	1 A

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