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1N5820

Description
RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size157KB,2 Pages
ManufacturerKingtronics
Websitehttp://www.kingtronics.com
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1N5820 Overview

RECTIFIER DIODE

1N5820 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeRECTIFIER DIODE
Website: www.kingtronics.com
Email: info@kingtronics.com
Tel: (852) 8106 7033
Fax: (852) 8106 7099
1N5820 THRU 1N5822
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 40 Volts
Forward Current -
3.0 Amperes
FEATURES
◆Plastic
package has Underwriters Laboratory Flammability Classification 94V-0
◆Metal
silicon junction,majority carrier conduction
◆Guarding
for overvoltage protection
◆Low
power loss,high efficiency
◆High
current capability,low forward voltage drop
◆High
surge capability
◆For
use in low voltage,high frequency inverters,free wheeling,and polarity protection applications
◆High
temperature soldering guaranteed:
250℃/10 seconds,0.375
(9.5mm) lead length,5 lbs. (2.3kg) tension
MECHANICAL DATA
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.
SYMBOLS
Maximum repetitive peak reverse voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TL=95℃
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current TA=25℃
at rated DC blocking voltage TA=100℃
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
1N5820
1N5821
1N5822
UNITS
VOLTS
VOLTS
VOLTS
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
3.0
40
28
40
Amps
I
FSM
V
F
I
R
C
J
R
θJA
T
J
,T
STG
0.475
80.0
Amps
0.500
2.0
40.0
300.0
40.0
-65 to +125
0.525
Volts
mA
p
F
/W
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
1

1N5820 Related Products

1N5820 1N5821 1N5822
Description RECTIFIER DIODE RECTIFIER DIODE, DO-201AD 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201
state ACTIVE - ACTIVE
Diode type RECTIFIER DIODE - rectifier diode
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