UNISONIC TECHNOLOGIES CO., LTD
1N60P
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
1N60P
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristic. This power MOSFET is usually used at
high speed switching applications of power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
=11.5Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
1N60PL-T92-B
1N60PG-T92-B
TO-92
1N60PL-T92-K
1N60PG-T92-K
TO-92
1N60PL-T92-R
1N60PG-T92-R
TO-92
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tape Reel
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QW-R502-634.A
1N60P
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
1.2
A
Continuous Drain Current
I
D
1.2
A
Pulsed Drain Current (Note 2)
I
DM
4.8
A
Single Pulsed (Note 3)
E
AS
50
mJ
Avalanche Energy
4.0
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (T
A
=25℃)
P
D
1
W
Junction Temperature
T
J
+150
℃
℃
Operating Temperature
T
OPR
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
1.2A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
140
UNIT
℃/W
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QW-R502-634.A
1N60P
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
600
V
10
μA
100 nA
-100 nA
0.4
V/℃
4.0
9.3 11.5
120 150
20
25
3.0 4.0
5
25
7
25
5.0
1.0
2.6
20
60
25
60
6.0
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
=300V, I
D
=1.2A, R
G
=50Ω
Turn-On Rise Time
t
R
(Note 2, 3)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=1.2A
Gate-Source Charge
Q
GS
(Note 2, 3)
Gate-Drain Charge
Q
GD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=1.2A
dI
F
/dt=100A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
V
GS
=0V, I
D
=250μA
V
DS
=600V, V
GS
=0V
V
GS
=30V, V
DS
=0V
I
GSS
V
GS
=-30V, V
DS
=0V
△BV
DSS
/
△
T
J
I
D
=250μA
2.0
1.4
1.2
4.8
160
0.3
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QW-R502-634.A
1N60P
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-634.A
1N60P
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-634.A
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