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1N6162AUS

Description
1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size116KB,4 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
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1N6162AUS Overview

1500 W, BIDIRECTIONAL, SILICON, TVS DIODE

1N6162AUS Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionO-XELF-N2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time17 weeks
Is SamacsysN
Minimum breakdown voltage64.6 V
Breakdown voltage nominal value64.6 V
Shell connectionISOLATED
Maximum clamping voltage97.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-XELF-N2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation7.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage51.7 V
surface mountYES
technologyZENER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
POWER DISCRETES
Description
Quick reference data
1500W Bipolar Transient Voltage Suppressor Surface Mount (US)
Features
Low dynamic impedance
Hermetically sealed non-cavity construction
1500 watt peak pulse power
7.5W continuous
These products are qualified to MIL-PRF-19500/516
and are preferred parts as listed in MIL-HDBK-5961.
They can be supplied fully released as JANTX and
JANTXV versions.
1N6138US thru 1N6173US
1N6139AUS thru 1N6173AUS
V
BR MIN
= 6.12 -180V
V
RWM
= 5.2 - 152V
V
C
(max) = 11 - 273V
I
(BR)
1N6138 - 1N6173 = 5mA - 175mA
Electrical Specifications
Electrical specifications @ T
A
= 25°C unless otherwise specified.
Device
Type
Minimum
Breakdow n
Voltage
V
(BR)
@ I
(BR)
Volts
Test
Working
Current Pk. Reverse
I
(BR)
Voltage
V
RWM
mA
175
175
175
150
150
150
150
125
125
125
125
100
100
100
100
75
75
75
75
Volts
5.2
5.7
5.7
6.2
6.2
6.9
6.9
7.6
7.6
8.4
8.4
9.1
9.1
9.9
9.9
11.4
11.4
12.2
12.2
Maximum
Reverse
Current
I
R1
µA
500
300
300
100
100
100
100
100
100
20
20
20
20
20
20
20
20
20
20
1
Maximum
Clamping
Voltage
V
C
@ I
P
Volts
11.0
11.8
11.2
12.7
12.1
14.0
13.4
15.2
14.5
16.3
15.6
17.7
16.9
19.0
18.2
21.9
21.0
23.4
22.3
Maximum
Pk. Pulse
Current I
P
T
P
= 1mS
Amps
136.4
127.1
133.9
118.1
124.0
107.1
111.9
98.7
103.4
92.0
96.2
84.7
88.8
78.9
82.4
68.5
71.4
64.1
67.3
Temp.
Coeff. of
V
(BR)
α
(VZ)
%/°C
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.08
Maximum
Reverse
Current
I
R2
@ 150°C
µA
12,000
3,000
3,000
2,000
2,000
1,200
1,200
800
800
800
800
600
600
600
600
400
400
400
400
www.semtech.com
1N6138
1N6139
1N6139A
1N6140
1N6140A
1N6141
1N6141A
1N6142
1N6142A
1N6143
1N6143A
1N6144
1N6144A
1N6145
1N6145A
1N6146
1N6146A
1N6147
1N6147A
6.12
6.75
7.13
7.38
7.79
8.19
8.65
9.0
9.5
9.9
10.45
10.8
11.4
11.7
12.35
13.5
14.25
14.4
15.2
Revision: May 3, 2006

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Description 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE

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