· Underwriters Laboratory recognition under UL standard
for safety 497B : Isolated loop circuit protection
· Glass passivated junction
· 1500W peak pulse power capability on 10/1000μS
waveform, repetition rate(duty cycle) : 0.05%
· Excellent clamping capability
· Low incremental surge resistance
· Very fast response time
· Includes 1N6267 thru 1N6303A
POWER 1500Watts
VOLTAGE 6.8 to 440 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
over passivated junction
· Terminals : Solder plated axial leads, solderable per
MIL-STD-750, method 2026
· High temperature soldering guaranteed : 265
℃
/10 seconds,
0.375"(9.5mm) lead length, 5lbs. (2.3Kg) tension
· Polarity : For uni-directional types the color band denotes
cathode, which is positive with respect to the
anode under normal TVS operation
· Mounting Position : Any
· Weight : 0.042 ounce, 0.18 gram
· Flammability : Epoxy is rated UL 94V-0
0.375(9.5)
0.285(7.2)
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Devices For Bidirectional Applications
· For bi-directional use C or CA suffix for types 1.5KE6.8 thru types K1.5E440(e.g. 1.5KE6.8C, 1.5KE440CA),
electrical characteristics apply in both directions.
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbols
Peak power dissipation with a 10/1000μS waveform (Note 1. Fig. 1)
Peak pulse current with a 10/1000μS waveform (Note 1)
Steady state power dissipation at T
L
=75℃ lead length 0.375"(9.5mm) (Note2)
Peak forward surge current, 8.3mm single half sine-wave unidirectional only (Note 3)
Maximum instantaneous forward voltage at 100A for unidirectional only (Note4)
Typical thermal resistance junction to lead
Typical thermal resistance junction to ambient
Operating junction and storage temperature range
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
Values
1500
See next table
6.5
200
3.5/5.0
20
75
-55 to +175
Units
Watts
Amps
Watts
Amps
Volts
℃/W
℃/W
℃
Rθ
JL
Rθ
JA
T
J
,T
STG
Notes:
(1) Non repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig.2
(2) Mounted on copper pads area of 1.6×1.6"(40×40mm) per Fig.5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum
(4) V
F
=3.5 Volts for 1.5KE220(A) & below; V
F
=5.0 Volts for 1.5KE250(A) & above
ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified)
JEDEC
Type
Number
1N6267
(C )
1N6267
(C )
A
1N6268
(C )
1N6268
(C )
A
1N6269
(C )
1N6269
(C )
A
1N6270
(C )
1N6270
(C )
A
1N6271
(C )
1N6271
(C )
A
1N6272
(C )
1N6272
(C )
A
1N6273
(C )
1N6273
(C )
A
1N6274
(C )
1N6274
(C )
A
1N6275
(C )
1N6275
(C )
A
1N6276
(C )
1N6276
(C )
A
1N6277
(C )
1N6277
(C )
A
1N6278
(C )
1N6278
(C )
A
1N6279
(C )
1N6279
(C )
A
1N6280
(C )
1N6280
(C )
A
1N6281
(C )
1N6281
(C )
A
1N6282
(C )
1N6282
(C )
A
1N6283
(C )
1N6283
(C )
A
1N6284
(C )
1N6284
(C )
A
1N6285
(C )
1N6285
(C )
A
1N6286
(C )
1N6286
(C )
A
1N6287
(C )
1N6287
(C )
A
1N6288
(C )
1N6288
(C )
A
1N6289
(C )
1N6289
(C )
A
1N6290
(C )
1N6290
(C )
A
1N6291
(C )
1N6291
(C )
A
1N6292
(C )
General
Semiconductor
Part
Number
1.5K E 6.8
(C )
1.5K E 6.8
(C )
A
1.5K E 7.5
(C )
1.5K E 7.5
(C )
A
1.5K E 8.2
(C )
1.5K E 8.2
(C )
A
1.5K E 9.1
(C )
1.5K E 9.1
(C )
A
1.5K E 10
(C )
1.5K E 10
(C )
A
1.5K E 11
(C )
1.5K E 11
(C )
A
1.5K E 12
(C )
1.5K E 12
(C )
A
1.5K E 13
(C )
1.5K E 13
(C )
A
1.5K E 15
(C )
1.5K E 15
(C )
A
1.5K E 16
(C )
1.5K E 16
(C )
A
1.5K E 18
(C )
1.5K E 18
(C )
A
1.5K E 20
(C )
1.5K E 20
(C )
A
1.5K E 22
(C )
1.5K E 22
(C )
A
1.5K E 24
(C )
1.5K E 24
(C )
A
1.5K E 27
(C )
1.5K E 27
(C )
A
1.5K E 30
(C )
1.5K E 30
(C )
A
1.5K E 33
(C )
1.5K E 33
(C )
A
1.5K E 36
(C )
1.5K E 36
(C )
A
1.5K E 39
(C )
1.5K E 39
(C )
A
1.5K E 43
(C )
1.5K E 43
(C )
A
1.5K E 47
(C )
1.5K E 47
(C )
A
1.5K E 51
(C )
1.5K E 51
(C )
A
1.5K E 56
(C )
1.5K E 56
(C )
A
1.5K E 62
(C )
1.5K E 62
(C )
A
1.5K E 68
(C )
1.5K E 68
(C )
A
1.5K E 75
(C )
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
71.4
82.5
Test
Current
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
Maximum
Temp.
Coefficient
of V
(BR)
(% /¡ C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified)
JEDEC
Type
Number
1N6292
(C )
A
1N6293
(C )
1N6293
(C )
A
1N6294
(C )
1N6294
(C )
A
1N6295
(C )
1N6295
(C )
A
1N6296
(C )
1N6296
(C )
A
1N6297
(C )
1N6297
(C )
A
1N6298
(C )
1N6298
(C )
A
1N6299
(C )
1N6299
(C )
A
1N6300
(C )
1N6300
(C )
A
1N6301
(C )
1N6301
(C )
A
1N6302
(C )
1N6302
(C )
A
1N6303
(C )
1N6303
(C )
A
General
Semiconductor
Part
Number
1.5K E 75
(C )
A
1.5K E 82
(C )
1.5K E 82
(C )
A
1.5K E 91
(C )
1.5K E 91
(C )
A
1.5K E 100
(C )
1.5K E 100
(C )
A
1.5K E 110
(C )
1.5K E 110
(C )
A
1.5K E 120
(C )
1.5K E 120
(C )
A
1.5K E 130
(C )
1.5K E 130
(C )
A
1.5K E 150
(C )
1.5K E 150
(C )
A
1.5K E 160
(C )
1.5K E 160
(C )
A
1.5K E 170
(C )
1.5K E 170
(C )
A
1.5K E 180
(C )
1.5K E 180
(C )
A
1.5K E 200
(C )
1.5K E 200
(C )
A
1.5K E 220
(C )
1.5K E 220
(C )
A
1.5K E 250
(C )
1.5K E 250
(C )
A
1.5K E 300
(C )
1.5K E 300
(C )
A
1.5K E 350
(C )
1.5K E 350
(C )
A
1.5K E 400
(C )
1.5K E 400
(C )
A
1.5K E 440
(C )
1.5K E 440
(C )
A
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
Max
78.8
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
Maximum
Temp.
Coefficient
of V
(BR)
(% /¡ C)
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Notes : (1)
(2)
(3)
(4)
P uls e tes t: t
p =
50ms
S urge current waveform per F ig. 3 and derate per F ig. 2
All terms and s ymbols are cons is tent with ANS I/IE E E C A62.35
For bidirectional types with V
R
10 volts and les s the I
D
limit is doubled
A pplic ation
¥ T his s eries of S ilicon Trans ient S uppres s ors is us ed in applications where large voltage trans ients can permanently damage voltage-s ens itive components.
¥ T he T V S diode can be us ed in applications where induced lightning on rural or remote trans mis s ion lines pres ents a hazard to electronic circuitry
(ref: R .E .A. s pecification P.E . 60).
¥ T his Trans ient Voltage S uppres s or diode has a puls e power rating of 1500 watts for one millis econd. T he res pons e time of T V S diode clamping action is
effectively ins tantaneous (1 x 10
-9
s econds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage s ens itive s emi-
conductors and components. T V S diodes can als o be us ed in s eries or parallel to increas e the peak power ratings.
RATINGS AND CHARACTERISTIC CURVES 1.5KE SERIES AND 1N6267 THRU 1N6303(C)A
Fig. 1Ð P eak P uls e Po wer R ating C ur ve
100
Fig. 2Ð P uls e Derating C ur ve
P eak P uls e P ower (P
P P
) or C urrent (I
P P
)
Derating in P ercentage, %
100
P eak P uls e P ower (kW)
75
10
50
1
P
PPM ,
25
0.1
0.1
μS
1.0
μS
1 0
μS
100
μS
1.0ms
10ms
0
0
25
50
75
100
125
150
o
175
200
t
d ,
P uls e Width (s ec.)
T
A
,
Ambient Temperature ( C )
Fig. 3Ð P uls e Waveform
150
F ig. 4 - Typic al J unc tion C apac itanc e
10,000
P eak P uls e C urrent, % I
R S M
tr = 10
μS
P eak Value
I
P P M
100
C
J
, C apacitance, pF
T
J
= 25 C
P uls e Width (td)
is defined as the point
where the peak current
decays to 50% of I
P P M
o
Unidirectional
B idirectional
V
R
= 0
1,000
Half Value
I
P P M
50
IP P
2
10/1000
μS
W aveform
as defined by R .E .A.
td
100
V
R
= R ated
S tand-off Voltage
f = 1 MHz
V s ig = 50mV p-p
o
T
J
= 25 C
5
10
100
500
I
P P M ,
0
0
1.0
2.0
3.0
4.0
10
t,
Time (ms )
V
(B R )
, B reakdown Voltage (V )
P
M(AV )
, S teady S tate P ower Dissipation (W)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
F ig. 5Ð S teady S tate Power
Derating C ur ve
60 H
Z
R es is tive or
Inductive Load
F ig. 6 - Maximum Non-repetitive Peak F orwar d
S urge C urrent Unidirectional Only
200
P eak F orward S urge C urrent (A)
8.3ms S ingle Half S ine-Wave
(J E DE C Method) T
J
= T
J
max.
100
L = 0.375" (9.5mm)
Lead Lengths
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
C opper Heat S inks
25
50
75
100
125
150
o
10
175
200
1
10
100
T
L
,
Lead Temperature ( C )
Number of C ycles at 60 H
Z
RATINGS AND CHARACTERISTIC CURVES 1.5KE SERIES AND 1N6267 THRU 1N6303(C)A
I am a newbie who is learning PCB design with Altium Designer. I find it difficult to learn the information about four-layer and six-layer boards in the forum. It would be great if there were some exc...
The string length is 6 bits. Convert it to 6-bit hexadecimal and send it from the serial port. For example, 123456, the serial port sends 01 E2 40, 000011, the serial port sends 00 00 0B. Can someone ...
I recently started debugging the CAN bus and found that the STM32-SK development board connected CAN_TX and CAN_RX to two ordinary GPIOs (PB8 and PB9). I was curious about how two ordinary GPIOs can i...
This is a verification board. The error is because the minimum spacing was changed when making a homemade PCB board. Please don't mind.
L3 and L4 should be 120nh in theory, but since they were not ava...
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It is divided into two parts: 1. The resident program (including main) needs to realize the serial communication function, that is, wait for the PC to send the binary file bin of the user program (inc...
In early 2002, I started to write a working program for an IC card prepaid electricity meter. The meter used Philips' 8-bit 51-expanded single-chip microcomputer
87LPC764
, and wa...[Details]
A single-chip microcomputer is also called a single-chip microcontroller. It is not a chip that completes a certain logical function, but a computer system integrated into one chip. In general, a c...[Details]
The Mobile Industry Processor Interface (MIPI) Alliance is an organization responsible for promoting the standardization of software and hardware in mobile devices. It has released the D-PHY specif...[Details]
1 Introduction
With the acceleration of the pace of urban modernization, society has higher requirements for urban road lighting and urban lighting projects. The state has clearly required tha...[Details]
To differentiate their products in a crowded and competitive market, manufacturers of handheld devices often consider battery life and power management as key selling points for cell phones, PDAs, ...[Details]
July 11, 2012, Beijing - Altera Corporation (NASDAQ: ALTR) today announced the launch of 40-Gbps Ethernet (40GbE) and 100-Gbps Ethernet (100GbE) intellectual property (IP) core products. These core...[Details]
1. Principle of displacement angle sensor
The angle sensor is used to detect angles. It has a hole in its body that fits the LEGO axle. When connected to the RCX, the angle sensor counts once ...[Details]
The data collector of the automatic weather station is generally designed based on a single-chip microcomputer or a PC/104 bus controller. It has the characteristics of good compatibility with PC, low...[Details]
1 Introduction
Ultrasonic waves have strong directivity, slow energy consumption, and can propagate over long distances in a medium, so they are used for distance measurement. Ultrasonic detec...[Details]
In the previous series, we have listed some basic knowledge of C language in Tables 1 to 3. We hope that beginners can strengthen their memory of the above tables and gradually learn to use them wh...[Details]
1. Background:
The instrument system parameter detection and control of the chemical production workshop of Tangshan Coal Gas Coking Plant are all analog instruments, some of which are eve...[Details]
1. With the development of modern industry and the continuous improvement of automation, some medium and large control systems have been greatly facilitated, which not only makes control easier, bu...[Details]
This week, Microsoft held its 2012 Microsoft Worldwide Partner Conference (WPC) in Toronto, Canada. At the conference, Microsoft showed its new products and services to partners around the world. A...[Details]
1 Introduction
In recent years, there have been many major advances in the production technology and processes of automotive headlights, which have greatly improved the performance of automoti...[Details]
PCB Design
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