tSs.mi-Conclu.cto'i ^Pioducti, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
TRANSZORB® Transient Voltage Suppressors
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
FEATURES
• Glass passivated chip junction
• Available
in
uni-directional
and
bi-directional
• 1500 W peak pulse power capability
with a 10/1000 u.s waveform, repetitive
rate (duty cycle): 0.01 %
•
•
•
•
•
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
PRIMARY CHARACTERISTICS
V
WM
5.0 V to 18V
1500W
PpPM
PD
'FSM
Tj max.
6.5 W
200 A
175°C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
P
PPM
LIMIT
1500
UNIT
W
A
W
A
V
Peak pulse power dissipation with a 10/1000 us waveform '
1
' (fig. 1)
Peak pulse current with a 10/1000 us waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only '
2
*
Maximum instantaneous forward voltage at 100 A (or uni-directional only
Operating junction and storage temperature range
Notes
''' Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
'
2
' 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
'PPM
PD
'FSM
V
F
TJ.
T
STG
See next table
6.5
200
3.5
- 5 5 t o + 175
•c
N.I .Semi-C ('Dilution reserves the right to change lest conditions, parameter limits und package dimensions without notice
Information lumuhed by NJ Scmi-Cunducton is believed to he htilh accurate and reliable
M
the lime of going to press. However '
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ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (T
A
= 25 °C unless otherwise noted)
JEDEC
TYPE NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
STAND-OFF
VOLTAGE
MINIMUM
BREAKDOWN
VOLTAGE
AT 1.0m A
VBR (V)
MAXIMUM
REVERSE
LEAKAGE
ATV
W M
"D (MA)
VWM (V)
MAXIMUM
CLAMPING
VOLTAGE
ATI
PP
= 1.0 A
V
C
(V)
MAXIMUM
CLAMPING
VOLTAGE AT
lpp = 10 A
V
C
(V)
MAXIMUM
PEAK
PULSE
CURRENT
IPP (A)
UNI-DIRECTIONAL TYPES
1N6373
(2)
1N6374
1N6375
1N6376
1N6377
1N6378
ICTE5
(2)
ICTE8
ICTE10
ICTE12
ICTE15
ICTE18
5.0
6.0
9.4
300
7.1
7.5
160
100
90
70
60
50
8.0
25.0
2.0
2.0
2.0
2,0
11.3
13.7
16.1
20.1
24.2
11.5
14.1
16.5
20.6
25.2
10.0
12.0
15.0
18.0
11.7
14.1
17.6
21.2
BI-DIRECTIONAL TYPES
1N6382
1N6383
1N6384
1N6385
1 N6386
Notes
'
1|
"C" suffix indicates bi-directional
(2)
(3
'
ICTE8C
ICTE10C
ICTE12C
ICTE15C
ICTE18C
8.0
9.4
50.0
2.0
2.0
2.0
2.0
11.4
14.1
16.7
20.8
24.8
11.6
14.5
17.1
21.4
25.5
100
90
70
60
50
10.0
12.0
15.0
18.0
11.7
14.1
17.6
21.2
ICTE5 and 1N6373 are not available as bi-directional
Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual V
c
(clamping voltage) to the V
BR
(breakdown voltage) as measured on a specific device
ORDERING INFORMATION (Example)
PREFERRED P/N
ICTE5-E3/54
ICTE5HE3/54
(1
>
Note
(1)
UNIT WEIGHT (g)
0.968
0.968
PREFERRED PACKAGE CODE
54
54
BASE QUANTITY
1400
1400
DELIVERY MODE
1 3" diameter paper tape and reel
1 3" diameter paper tape and reel
Automotive grade
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style 1.5KE
1.0(25.4)
MIN.
0.210
(5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042(1.07)
0.038 (0.96)
DIA.
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