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1N6376

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size103KB,2 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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1N6376 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

1N6376 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
tSs.mi-Conclu.cto'i ^Pioducti, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
TRANSZORB® Transient Voltage Suppressors
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
FEATURES
• Glass passivated chip junction
• Available
in
uni-directional
and
bi-directional
• 1500 W peak pulse power capability
with a 10/1000 u.s waveform, repetitive
rate (duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
PRIMARY CHARACTERISTICS
V
WM
5.0 V to 18V
1500W
PpPM
PD
'FSM
Tj max.
6.5 W
200 A
175°C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
P
PPM
LIMIT
1500
UNIT
W
A
W
A
V
Peak pulse power dissipation with a 10/1000 us waveform '
1
' (fig. 1)
Peak pulse current with a 10/1000 us waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only '
2
*
Maximum instantaneous forward voltage at 100 A (or uni-directional only
Operating junction and storage temperature range
Notes
''' Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
'
2
' 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
'PPM
PD
'FSM
V
F
TJ.
T
STG
See next table
6.5
200
3.5
- 5 5 t o + 175
•c
N.I .Semi-C ('Dilution reserves the right to change lest conditions, parameter limits und package dimensions without notice
Information lumuhed by NJ Scmi-Cunducton is believed to he htilh accurate and reliable
M
the lime of going to press. However '
Scini-t oiidutiiirs iv-uincs mi reiptmsibilify tnr my errors »r uirmsitmi discovered in its u.se NJ Semi-loiidiiitiT* en
ir.ti ii'iTS hi
vcrilv ih.it il.'ila^htcij ire current hefbre plnciim urden

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Description 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow unknown
Maker New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor - New Jersey Semiconductor
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