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2N1846

Description
SILICON CONTROLLED RECTIFIER,200V V(DRM),10A I(T),TO-208AA
CategoryAnalog mixed-signal IC    Trigger device   
File Size35KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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2N1846 Overview

SILICON CONTROLLED RECTIFIER,200V V(DRM),10A I(T),TO-208AA

2N1846 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ECCN codeEAR99
Critical rise rate of minimum off-state voltage30 V/us
Maximum DC gate trigger current100 mA
Maximum DC gate trigger voltage3 V
Maximum holding current200 mA
Maximum leakage current1 mA
On-state non-repetitive peak current125 A
Maximum on-state current10000 A
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage200 V
surface mountNO
Trigger device typeSCR
Base Number Matches1

2N1846 Related Products

2N1846 2N1844 2N1849 2N1848 2N1850
Description SILICON CONTROLLED RECTIFIER,200V V(DRM),10A I(T),TO-208AA SILICON CONTROLLED RECTIFIER,100V V(DRM),10A I(T),TO-208AA SILICON CONTROLLED RECTIFIER,400V V(DRM),10A I(T),TO-208AA SILICON CONTROLLED RECTIFIER,300V V(DRM),10A I(T),TO-208AA SILICON CONTROLLED RECTIFIER,500V V(DRM),10A I(T),TO-208AA
Reach Compliance Code compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum DC gate trigger current 100 mA 100 mA 100 mA 100 mA 100 mA
Maximum DC gate trigger voltage 3 V 3 V 3 V 3 V 3 V
Maximum holding current 200 mA 200 mA 200 mA 200 mA 200 mA
Maximum leakage current 1 mA 1 mA 1 mA 1 mA 1 mA
On-state non-repetitive peak current 125 A 125 A 125 A 125 A 125 A
Maximum on-state current 10000 A 10000 A 10000 A 10000 A 10000 A
Maximum operating temperature 100 °C 100 °C 100 °C 100 °C 100 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C
Off-state repetitive peak voltage 200 V 100 V 400 V 300 V 500 V
surface mount NO NO NO NO NO
Trigger device type SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 1
Critical rise rate of minimum off-state voltage 30 V/us 30 V/us 30 V/us - -
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