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2N60LG-TF1-T

Description
2A, 600V N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size242KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

2N60LG-TF1-T Overview

2A, 600V N-CHANNEL POWER MOSFET

2N60LG-TF1-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)140 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)23 W
Maximum pulsed drain current (IDM)8 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)150 ns
Maximum opening time (tons)120 ns
UNISONIC TECHNOLOGIES CO., LTD
2N60L
2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
2N60L
is a high voltage MOSFET and is
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state
resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC
converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
< 5Ω @ V
GS
= 10V, I
D
=1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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