Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N6098 2N6099 2N6100 2N6101
DESCRIPTION
・
・With
TO-220 package
APPLICATIONS
・For
use in general-purpose amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2N6098
2N6099
V
CBO
Collector-base voltage
2N6100
2N6101
2N6098
2N6099
V
CEO
Collector-emitter voltage
2N6100
2N6101
V
EBO
I
C
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
80
80
8
10
75
150
-65~150
V
A
W
℃
℃
Open emitter
80
80
70
70
V
CONDITIONS
VALUE
70
70
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.67
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6098
2N6099
V
CEO(SUS)
Collector-emitter
sustioning voltage
2N6100
2N6101
V
CEsat-1
V
CEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
2N6098/6099
V
BE
Base-emitter on voltage
2N6100/6101
I
CBO
I
EBO
Collector cut-off current
Emitter cut-off current
2N6098/6099
h
FE
DC current gain
2N6100/6101
f
T
Transition frequency
2N6098 2N6099 2N6100 2N6101
CONDITIONS
MIN
70
70
TYP.
MAX
UNIT
I
C
=0.1A ;I
B
=0
80
80
I
C
=5A;I
B
=0.5A
I
C
=10A;I
B
=2.5A
I
C
=4A ; V
CE
=4V
1.3
I
C
=5A ; V
CE
=4V
V
CB
=Rated V
CBO
;I
E
=0
T
C
=150℃
V
EB
=8V; I
C
=0
I
C
=4A ; V
CE
=4V
20
I
C
=5A ; V
CE
=4V
I
C
=1A ; V
CE
=10V
0.8
80
0.5
2.0
1.0
1.3
3.5
V
V
V
V
mA
mA
MHz
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6098 2N6099 2N6100 2N6101
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
JMnic
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