Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・High
DC current gain
・Excellent
safe operating area
APPLICATIONS
・Designed
for high power applications
and switching circuits such as relay
or solenoid drivers, dc to dc converters
or inverters.
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6359
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
80
7
16
30
4
150
150
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2N6359
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdwon voltage
I
C
=0.2A ;I
B
=0
80
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=8A ;I
B
=0.8A
1.4
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=16A; I
B
=3.2A
4.0
V
V
BE
Base-emitter on voltage
I
C
=8A ; V
CE
=4V
2.2
V
I
CEO
Collector cut-off current
V
CE
=80V; I
B
=0
V
CE
=100V; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=7V; I
C
=0
2.0
2.0
10.0
5.0
mA
I
CEX
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE-1
DC current gain
I
C
=8A ; V
CE
=4V
15
60
h
FE-2
DC current gain
I
C
=16A ; V
CE
=4V
5
f
T
Transition freuqency
I
C
=1A ; V
CE
=4V
0.2
MHz
2
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