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2N6653

Description
HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size666KB,2 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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2N6653 Overview

HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS

2N6653 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Maximum collector current (IC)20 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Base Number Matches1

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Description HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS
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