flsiasu
^Efni-don
,
Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Devices
2N6674
2N6675
2N6689
2N6690
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Symbol
VCEO
VCBO
VCEX
VEBO
IB
2N6674
2N6689
2N6675
2N6690
Unit
300
450
450
7.0
5.0
15
2N6674
2N667S
6.0
<2)
175
400
650
650
Collector Current
Ic
Vdc
Vdc
Vdc
Vdc
Adc
Adc
2N6674, 2N6675
TO-3
Total Power Dissipation
<d>.
T
A
= +25°C
(3>.
T
c
= +25°C
(li
PT
Top; Tstg
2N6689
2N6690
3.0
(3
>
175
W
W
Operating & Storage Temperature Range
-65 to +200
°C
Unit
°C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance. Junction-to-Case
1)
2)
3)
Derate linearly 1 .0 W/°C for T
c
> 25°C
Derate linearly 34.2 mW/°C for T
A
- 25°C
Derate linearly 17. 1 mW/°C for T
A
> 25°C
Symbol
Max.
Re:c
1.0
2N6689, 2N6690
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (T
c
= 25°C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Ic = 200 mAdc
Collector-Emitter Cutoff Current
VOE = 450 Vdc. V
B
E = -1.5 Vdc
V
CE
= 650 Vdc. V
BE
= - 1 .5 Vdc
2N6674. 2N6689
2N6675. 2N6690
2N6674. 2N6689
2N6675. 2N6690
V(BR)CEO
|
Min.
Max.
Unit
300
400
0.1
0.1
Vdc
ICEX
mAdc
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice inrormation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (con't)
Min.
Symbol
Characteristics
Emitter-Base Cutoff Current
IEBO
V
EB
= 7.0 Vdc
Collector-Base Cutoff Current
VCB = 450 Vdc
2N6674, 2N6689
ICBO
V
CB
= 650 Vdc
2N6675. 2N6690
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
15
I
c
= 1 Adc; V
CE
= 3.0 Vdc
HFE
8
I
c
= 10 Adc: V
CE
= 2.0 Vdc
Collector-Emitter Saturation Voltage
I
c
= 10 Adc; IB = 2 Adc
VcE(sat)
l
c
=
15 Adc; IB = 5 Adc
Base-Emitter Saturation Voltage
VflEfgat)
I
c
= 10 Adc; IB = 2 Adc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Fonvard Current Transfer Ratio
3.0
Ihfe
I
c
= 1.0 Adc, V
CE
= 1°
vd
c, f = 5 MHz
Output Capacitance
150
^obo
V
CB =
1° Vdc, IE = 0, 100 kHz < f < 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
'd
Rise Time
V
t
Storage Time
See Figure 3 of MIL-PRF- 19500/537
s
Fall Time
'f
t
Cross-Over Time
c
SAFE OPERATING AREA
DC Tests (continuous dc)
T
c
= +25°C. power application time = 1.0 s; 1 Cycle. (See Figure 4 of MIL-PRF-19500/537)
Testl
V
CE
=• 11 -7 Vdc, I
c
= 15 Adc
All Types
Test 2
V
CE
= 30 Vdc.
l
c
= 5.9 Adc
2N6674, 2N6675
Test 3
VCE = 100 Vdc, I
c
= 0.25 Adc
All Types
Test 4
VCE = 25 Vdc, I
c
= 7.0 Adc
2N6689, 2N6690
TestS
Max.
2.0
1.0
1.0
Unit
mAdc
mAdc
40
20
1.0
5.0
1.5
Vdc
Vdc
10
500
0.1
0.6
2.5
0.5
0.5
PF
US
US
(is
US
|j.s
VCE = 300 Vdc, I
c
= 20 mAdc
2N6674, 2N6689
VCE = 400 Vdc, I
t
- = 10 mAdc
2N6675. 2N6690
Clamped Switching
T
A
= 25°C; V
cc
= 15 Vdc: Load condition B: R
BB1
- 5 Q; R
BB2
= 1.5 Q;
VBB:
=
5 Vdc; L = 50 j^H; R of inductor = .05Q: R
L
= R of inductor.
(See Figure 6 of MIL-PRF-19500/53 7)
Clamp Voltage = 350: Ic = 10 Adc
2N6674, 2N6689
Clamp Voltage - 450; Ic = 10 Adc
2N6675. 2N669Q
(4) Pulse Test: Pulse Width = 300^s, Duty Cycle < 2.0° o.
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