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2SA1488_07

Description
Silicon PNP Epitaxial Planar Transistor
File Size24KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
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2SA1488_07 Overview

Silicon PNP Epitaxial Planar Transistor

2SA1488/1488A
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3851/A)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
2SA1488 2SA1488A
–60
–60
–6
–4
–1
25(Tc=25°C)
150
–55 to +150
–80
–80
Unit
V
V
V
A
A
W
°C
°C
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Application :
Audio and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
V
CB
=
V
EB
=–6V
I
C
=–25mA
V
CE
=–4V, I
C
=–1A
I
C
=–2A, I
B
=–0.2A
V
CE
=–12V, I
E
=0.2A
V
CB
=–10V, f=1MHz
Conditions
External Dimensions
FM20 (TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Ratings
2SA1488
2SA1488A
–100
max
–100
max
–60
–100
max
–60
min
40
min
–80
min
–80
Unit
µ
A
µ
A
V
V
MHz
pF
2.54
2.2
±0.2
16.9
±0.3
V
8.4
±0.2
13.0min
–0.5
max
15
typ
90
typ
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–12
R
L
(Ω)
6
I
C
(A)
–2
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–200
I
B2
(mA)
200
t
on
(
µ
s)
0.25typ
t
stg
(
µ
s)
0.75typ
t
f
(
µ
s)
0.25typ
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
Co l l e c t o r - E m i tt e r Sa t u r a t i on Vol t ag e V
C E (sa t)
(V )
–4
V
CE
(sat) – I
B
Characteristics
(Typical)
– 1 .5
I
C
– V
B E
Temperature Characteristics
(Typical)
–4
( V
CE
= – 4 V )
–8
–3
0m
A
60mA
–50m A
C ol l e c t o r C ur r ent I
C
( A)
–40 mA
–30m A
C o l l e c t o r C u r r e nt I
C
( A)
–3
– 1 .0
I
C
= – 3A
– 2A
–1 A
0
–0.1
I
B
=–5mA
0
0
–1
–2
–3
–4
–5
–6
–0.5
–0.1
–0.5
–1
0
0
– 0. 5
–30˚C
25˚C
–1
–1
125
˚C (
–10mA
– 0 .5
(Cas
e
emp
)
Tem
p)
(Cas
e Tem
p)
–2
–20m A
–2
Cas
eT
–1 . 0
– 1 .5
Col l e ct o r- Em i t t er Vo l t ag e V
C E
(V )
Ba s e C ur r en t I
B
( A)
Ba s e - E m i t to r V ol t ag e V
B E
( V)
(V
C E
=– 4 V )
500
D C C u r r e n t Ga i n h
F E
D C Cu r r e n t Ga i n h
FE
200
12 5˚ C
100
2 5˚ C
–3 0˚ C
50
( V
C E
= –4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
Typ
100
50
1
20
–0.01
– 0. 1
–0 .5
–1
–4
20
– 0 .0 2
–0 . 1
C ol l ec t or C ur r en t I
C
( A)
–1
–4
0.7
1
10
Time t(ms)
1 00
1 0 00
C ol l ec t or C urr en t I
C
(A)
f
T
– I
E
Characteristics
(Typical)
60
(V
C E
=– 1 2 V )
–10
–5
50
Cu t- off F r e q u e n c y f
T
(M H
Z
)
Col lec t o r C u r r e n t I
C
( A )
Safe Operating Area
(Single Pulse)
30
1m
Pc – Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
W
ith
In
10
m
s
40
Typ
DC
–1
–0.5
Without Heatsink
Natural Cooling
M a xim u m P o we r D i s s i p a ti o n P
C
( W )
100ms
s
30
fin
150x150x2
1 0 0x
1 0
10
0x
2
ite
he
at
20
si
nk
50x50x2
Without Heatsink
2
10
–0.1
– 0 .0 5
0.05
0.1
0 .5
1
3
3
5
10
50
1 00
Em i t t er C urren t I
E
(A )
Co ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
0
0.005 0.01
0
0
25
50
75
100
125
150
Am b i e n t T e m p er a t u r e T a( ˚ C )
19
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