2SA1493
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3857)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–200
–200
–6
–15
–5
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
–100
max
–100
max
–200
min
50
min
∗
– 3.0
max
20
typ
400
typ
V
MHz
pF
20.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–200V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–5A
I
C
=–10A, I
B
=–1A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
Unit
µ
A
µ
A
V
a
b
2
3
1.05
+0.2
-0.1
5.45
±0.1
5.45
±0.1
B
C
E
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–500
I
B2
(mA)
500
t
on
(
µ
s)
0.3typ
t
stg
(
µ
s)
0.9typ
t
f
(
µ
s)
0.2typ
Weight : Approx 18.4g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c t o r - E m i t te r S a tu r a t i o n Vo l ta ge V
C E (s at)
( V )
–15
5A
–1.
V
CE
( sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
BE
Temperature Characteristics
(Typical)
–15
( V
CE
=– 4 V )
A
–1
–6
0
A
0m
–400
mA
C ol l e c t o r C u r r e nt I
C
( A )
–200m
A
–10
–1 00 m A
C o l l e c t or C u r r e n t I
C
( A)
–2
–10
(Ca
seT
emp
25˚C
)
(Case
Temp
)
I
B
=– 50 mA
–5
125
˚C
I
C
= – 15 A
–1 0A
– 5A
0
0
–1
–2
–3
–4
0
0
0
0
–1
–2
–3
–4
–30˚C
(CaseT
–1
–5
–1
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
emp)
–2
C ol l ec t or - Emi tt er Vo l ta ge V
C E
(V)
Ba se Cu r r e nt I
B
( A)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
= – 4 V)
300
D C C u r r e n t G ai n h
F E
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= – 4 V)
200
DC C ur r en t Ga i n h
FE
1 25 ˚ C
2 5˚ C
100
– 30 ˚ C
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
2
θ
j - a
– t Characteristics
1
Typ
100
50
0.5
50
10
–0.02
–0 . 1
–0 .5
–1
–5 –10 –15
20
–0.02
–0 . 1
–0 .5
–1
–5
– 10 – 15
0.1
1
10
1 00
Time t(ms)
1 00 0
20 0 0
Co l le ct o r C u rre nt I
C
(A )
C o ll e ct o r C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= – 1 2 V )
30
–50
Safe Operating Area
(Single Pulse)
1 60
3m
Pc – Ta Derating
20
Typ
C ut- off Fr eq u e n c y f
T
( M H
Z
)
Co llec to r C u r r e n t I
C
( A )
–10
–5
D
C
10
M ax im um P ow er Di s s i p a t i o n P
C
( W )
m
s
0m
s
10ms
1 20
W
20
s
ith
In
fin
ite
he
80
at
si
nk
–1
– 0 .5
Without Heatsink
Natural Cooling
10
40
0
0.02
–0.1
0.1
1
Em i t t er Cur ren t I
E
(A )
10
–2
–1 0
– 10 0
– 30 0
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
5
0
W i t ho u t He a t s i n k
0
25
50
75
100
125
150
Am b i e nt T e m pe r a t u r e T a ( ˚ C)
21
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