^zml-i-onauctQi L/toaucti, L/nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA1943
DESCRIPTION
• High Current Capability
• High Power Dissipation
• High Collector-Emitter Breakdown Voltage-
: V
(BR
)CEo= -230V(Min)
• Complement to Type 2SC5200
APPLICATIONS
• Power amplifier applications
• Recommend for 100W high fidelity audio frequency amplifier
output stage applications
1
2 3
PIN 1.BASE
2.COLLECTOR
3.&1ITTER
TO-3PL package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
mm
DIM
A
B
C
D
E
F
G
H
J
K
N
P
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
-1.5
A
PC
Collector Power Dissipation
@ T
C
=25°C
150
W
MIN
25,50
19.80
4.50
0.90
2.80
2.40
10.80
3.10
0.50
20JDO
3.90
2.40
MAX
26.50
20.20
5.50
1.10
3.20
2.60
11.00
3.30
0.70
21.00
4.10
2JBO
Tj
Junction Temperature
150
'C
q
u
w
R
Tstg
Storage Temperature Range
-55-150
•c
3.10
1.90
3.90
2.90
3^0
2.10
4.10
3.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1943
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
\c-
-50mA ; I
B
= 0
-230
V
VcE(sat)
Collector-Emitter Saturation Voltage
I
C
=-8.0A;I
B
=-0.8A
-3.0
V
VeE(on)
Base-Emitter On Voltage
lc= -7A ; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
V
CB
= -230V ; I
E
= 0
-5
uA
IEBO
Emitter Cutoff Current
V
EB
= -5V; l
c
= 0
-5
uA
hpE-1
DC Current Gain
lc=-1A;V
CE
=-5V
55
160
hpE-2
DC Current Gain
lc=-7A;V
CE
=-5V
35
COB
Output Capacitance
I
E
=0 ; V
CB
= -1 OV;f= 1.0MHz
360
pF
fr
Current-Gain— Bandwidth Product
lc=-1A;V
CE
=-5V
30
MHz
•
hpE-1 Classifications
R:55-95
R55
55-60
O:95-160
095
R60
60-65
R65
65-70
R70
70-75
R75
75-80
R80
80-85
R85
85-90
R90
90-95
O100
100-105
O105
105-110
0110
110-115
O115
115-120
O120
120-125
O125
125-130
95-100
O130
130-135
O135
135-140
0140
140-145
0145
145-150
O1 50
150-155
O155
155-160