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2SA1980EF

Description
General small signal amplifier
CategoryDiscrete semiconductor    The transistor   
File Size239KB,4 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
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2SA1980EF Overview

General small signal amplifier

2SA1980EF Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
2SA1980EF
PNP Silicon Transistor
Description
General small signal amplifier
PIN Connection
Features
Low collector saturation voltage : V
CE(sat)
=-0.3V(Max.)
Low output capacitance : C
ob
=4pF(Typ.)
Complementary pair with 2SC5343EF
3
1
2
Ordering Information
Type NO.
2SA1980EF
SOT-523F
Marking
A
① ② ③
Package Code
SOT-523F
①Device
Code
②hFE
Rank
③Year&Week
Code
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-50
-50
-5
-150
150
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NF
Test Condition
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1KHz, Rg=10KΩ
Min. Typ. Max.
-50
-50
-5
-
-
70
-
80
-
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-0.1
-0.1
700
-0.3
-
7
10
Unit
V
V
V
μA
μA
-
V
MHz
pF
dB
*: h
FE
rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700
KSD-T5E008-000
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