Ordering number : ENN6309B
2SA2016 / 2SC5569
2SA2016 / 2SC5569
Applications
•
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
•
•
Adoption of FBET and MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitales miniaturization in end products.
High allowable power dissipation.
Specifications
( ) : 2SA2016
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Mounted on a ceramic board (250mm
2
!0.8mm)
Tc=25°C
Conditions
Ratings
(--50)100
(--50)100
(--)50
(--)6
(--)7
(--)10
(--)1.2
1.3
3.5
150
--55 to +150
Unit
V
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(-
-)500mA
VCE=(--)10V, IC=(--)500mA
200
(290)330
Ratings
min
typ
max
(--)0.1
(--)0.1
560
MHz
Unit
µA
µA
Marking : 2SA2016 : AW 2SC5569 : FF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62405EA MS IM TB-00001406 / 52501 TS KT TA-3259 No.6309-1/5
2SA2016 / 2SC5569
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)10V, f=1MHz
IC=(--)3.5A, IB=(-
-)175mA
IC=(--)2A, IB=(--)40mA
IC=(--)2A, IB=(--)40mA
IC=(--)10µA, IE=0A
IC=(--)100µA, RBE=0Ω
IC=(--)1mA, RBE=∞
IE=(-
-)10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--50)100
(--50)100
(--)50
(--)6
(40)30
(225)420
25
Ratings
min
typ
(50)28
(--230)160 (--390)240
(-
-240)110 (--400)170
(--)0.83
(--)1.2
max
Unit
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7008-003
Top View
4.5
1.6
1.5
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
+
470µF
VCC=25V
RB
RL
2.5
1.0
4.0
VBE= --5V
1
0.4
0.5
1.5
2
3
0.4
IC=20IB1= --20IB2=2.5A
For PNP, the polarity is reversed.
3.0
1 : Base
2 : Collector
3 : Emitter
Bottom View
SANYO : PCP
--7
IC -- VCE
2SA2016
--90mA
--80mA
--70mA
--60mA
A
7
IC -- VCE
80
m
70mA
--6
6
Collector Current, IC -- A
Collector Current, IC -- A
90mA
--5
A
--50m
--40mA
--30mA
60mA
50mA
40mA
A
5
30mA
--3
3
100m
--20mA
A
--4
m
00
--1
4
20mA
10mA
--2
--10mA
2
--1
1
0
0
--0.4
--0.8
--1.2
IB=0mA
--1.6
--2.0
IT00206
0
0
2SC5569
0.4
0.8
1.2
1.6
IB=0mA
2.0
IT00207
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.6309-2/5
2SA2016 / 2SC5569
--8
--7
IC -- VBE
2SA2016
VCE= --2V
Collector Current, IC -- A
8
7
6
5
4
3
2
1
0
IC -- VBE
2SC5569
VCE=2V
Collector Current, IC -- A
--6
--5
--4
--3
--2
--1
0
0
Ta=
75
°
2 5
°
C
C
--25
°
C
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
1000
7
5
--1.2
--1.4
IT00208
1000
0
0.2
0.4
Ta=7
5
°
C
25
°
C
--25
°
C
0.6
0.8
1.0
1.2
1.4
IT00209
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
2SA2016
VCE= --2V
DC Current Gain, hFE
7
5
3
2
Ta=75°C
25°C
--25°C
2SC5569
VCE=2V
DC Current Gain, hFE
3
2
Ta=75°C
25
°C
--25°C
100
7
5
3
2
100
7
5
3
2
10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
--1000
5 7 --10
IT00210
10
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT00211
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SA2016
IC / IB=20
VCE(sat) -- IC
2SC5569
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
3
2
--100
7
5
3
2
--10
7
5
3
2
5
°
C
Ta=7
°
C
--25
25
°
C
7
Ta=
C
--25
°
5
°
C
C
25
°
--1.0
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
--10000
7
5
3
2
5 7 --10
IT00212
Collector Current, IC -- A
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0.01
2
3
5 7 0.1
5 7 10
IT00214
VCE(sat) -- IC
2SA2016
IC / IB=50
VCE(sat) -- IC
2SC5569
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
--100
7
5
3
2
--10
--0.01
2
3
7
Ta=
--25
°
C
5 7 --0.1
2
5
°
C
C
25
°
Ta
=
--1000
7
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
°
C
25
°
C
--2
5
75
°
C
5
°
C
Ta=7
C
--25
°
2
3
C
25
°
5 7 1.0
2
3
5 7 10
IT00215
3
5 7 --1.0
2
3
Collector Current, IC -- A
5 7 --10
IT00213
Collector Current, IC -- A
No.6309-3/5
2SA2016 / 2SC5569
--10000
VBE(sat) -- IC
2SA2016
IC / IB=50
10000
VBE(sat) -- IC
2SC5569
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
7
5
3
2
7
5
3
2
--1000
7
5
3
2
Ta= --25
°C
1000
7
5
3
2
Ta= --25°C
75
°C
25
°C
75
°C
25
°C
--100
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
5
3
5 7 --10
IT00216
100
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Cob -- VCB
Collector Current, IC -- A
5
5 7 10
IT00217
Cob -- VCB
2SA2016
f=1MHz
Output Capacitance, Cob -- pF
3
2
100
7
5
3
2
10
7
5
3
2
2SC5569
f=1MHz
Output Capacitance, Cob -- pF
2
100
7
5
3
2
10
7
5
3
2
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5
Collector-to-Base Voltage, VCB -- V
1000
7
IT00218
1000
Collector-to-Base Voltage, VCB -- V
IT00219
f T -- IC
f T -- IC
2SC5569
VCE=10V
Gain-Bandwidth Product, f T -- MHz
5
3
2
Gain-Bandwidth Product, f T -- MHz
2SA2016
VCE= --10V
7
5
3
2
100
7
5
3
2
100
7
5
3
2
10
5 7--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
10
Collector Current, IC -- A
2
10
7
5
5 7 --10
IT00220
2.0
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5 7 10
IT00221
ASO
ICP=10A
IC=7A
DC
PC -- Ta
2SA2016 / 2SC5569
100ms
1m
Collector Current, IC -- A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
10
ms
Collector Dissipation, PC -- W
s
50
0
µ
s
10
0
µ
s
1.5
1.3
op
M
era
t
ou
ion
nte
1.0
do
na
ce
ram
ic
bo
ard
0.01
0.1
2SA2016 / 2SC5569
Tc=25°C
Single pulse
For PNP, the minus sign is omitted.
2
3
5 7 1.0
2
3
5 7 10
2
3
0.5
(25
0m
m
2
!
0
.8m
m)
160
IT00223
0
5 7 100
IT00222
0
20
40
60
80
100
120
140
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta --
°C
No.6309-4/5
2SA2016 / 2SC5569
4.0
3.5
PC -- Tc
2SA2016 / 2SC5569
Collector Dissipation, PC -- W
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
Case Temperature, Tc --
°C
60
80
100
120
140
160
IT01535
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
PS No.6309-5/5
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