2SA205H datasheet, PDF - EEWORLD Datasheet

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2SA205H: Description600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236; Categorysemiconductor Discrete semiconductor; File Size19KB，1 Pages; ManufacturerETC1

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2SA205H Overview

600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236

2SA205H Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum on-time	255 ns
Maximum off time	35 ns
Maximum collector current	0.6000 A
Maximum Collector-Emitter Voltage	40 V
Processing package description	ROHS COMPLIANT, PLASTIC PACKAGE-3
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
Transistor component materials	silicon
Transistor type	Universal small signal
Minimum DC amplification factor	20
Rated crossover frequency	200 MHz

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HIROO

General Purpose Amplifier

■

Features

●

Collector current to 500mA

TRANSISTOR

2SA205 (MMBT4403)

PNP

- 40V, - 0.5A

Units: mm

■

Schematic Diagram

3 C

SOT-23

2.9±0.1

0.425±0.075

0.6

1.2±0.2

1 E

1.9±0.2

2.4±0.35

0.1

2 B

■

Ordering Information

Type

2SA205H

2SA205S

Package Pin 1,2,3 Mark Shipping

SOT-23 E, B, C TA5 3kpcs/Reel&Tape

TO-92

E, B, C TA5 3kpcs/Reel&Tape

0∼0.15

1.2±0.

TO-92

4.55±0.15

3.5±0.2

■

Maximum ratings (Ta = 25℃)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector power 2SA205H

2SA205S

dissipation

Junction Temperature

Storage Temperature

Symbol

CBO

CEO

EBO

stg

Limit

-40

-5.0

-500

350

625

150

-55 to+150

Unit

1.27TYP

4.5±0.2

14.3±0.2

1.6Max

0 0.38

3.43Max

℃

0.465±0.085

2.54±0.1

0.435±0.075

■

Electrical characteristics (Ta = 25℃)

Paramenter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output　capacitance

Symbol

CBO

CEO

EBO

CBO

BEX

CE(　sat

　)

Cob

Min.

-40

-5.0

Typ.

Max.

Unit

µA

MHz

Conditions

=0.1mA,I

=1.0mA,I

=0.1A,I

=35V,V

=0.4V

=35V,V

=0.4V

=-500mA,I

=-50mA

=-150mA,V

=-2.0V

=50mA,V

=-20V f=100MHz

=10V,I

f=140kHz

200

-0.1

-0.75

365

8.5

HIROO

1/1

1.25±0.15

2SA205H Related Products

	2SA205H	MMBT4403	2SA205	2SA205S
Description	600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236	600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236	600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236	600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
Number of terminals	3	3	3	3
Transistor polarity	PNP	PNP	PNP	PNP
Maximum on-time	255 ns	255 ns	255 ns	255 ns
Maximum off time	35 ns	35 ns	35 ns	35 ns
Maximum collector current	0.6000 A	0.6000 A	0.6000 A	0.6000 A
Maximum Collector-Emitter Voltage	40 V	40 V	40 V	40 V
Processing package description	ROHS COMPLIANT, PLASTIC PACKAGE-3	ROHS COMPLIANT, PLASTIC PACKAGE-3	ROHS COMPLIANT, PLASTIC PACKAGE-3	ROHS COMPLIANT, PLASTIC PACKAGE-3
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	single	single	single	single
Number of components	1	1	1	1
Transistor component materials	silicon	silicon	silicon	silicon
Transistor type	Universal small signal	Universal small signal	Universal small signal	Universal small signal
Minimum DC amplification factor	20	20	20	20
Rated crossover frequency	200 MHz	200 MHz	200 MHz	200 MHz

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