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2SA2088_11

Description
Medium power transistor (-60V, -0.5A)
File Size925KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

2SA2088_11 Overview

Medium power transistor (-60V, -0.5A)

Medium power transistor (60V,
0.5A)
2SA2088
Features
1) High speed switching. (Tf : Typ. : 60ns at I
C
=
500mA)
2) Low saturation voltage, typically
(Typ. :
150mV at I
C
=
100mA, I
B
=
10mA)
3) Strong discharge power for inductive load and capacitance load.
4) Complements the 2SC5876
Dimensions
(Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2
0.7
1.25
(2)
(1)
Applications
Small signal low frequency amplifier
High speed switching
2.1
0.65 0.65
1.3
0.15
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : VM
Structure
PNP Silicon epitaxial planar transistor
Packaging
specifications
Package
Type
Taping
T106
3000
Code
Basic ordering unit (pieces)
2SA2088
Absolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
DC
I
C
I
CP
P
C
Limits
−60
−60
−6
−0.5
−1.0
200
150
−55
to 150
Unit
V
V
V
A
A
mW
°C
°C
∗1
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Pw=10ms
∗2
Each terminal mounted on a recommended land
Pulsed
Tj
Tstg
www.rohm.com
c
2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.03 - Rev.B
0.1Min.
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