JMnic
Product Specification
Silicon PNP Power Transistors
2SA490
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC790
APPLICATIONS
・For
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-50
-40
-5
-3
3
25
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA490
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA ,I
B
=0
-40
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-10mA; I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-0.45
-1.2
V
V
BE
Base-emitter voltage
I
C
=-2A ; V
CE
=-2V
-0.85
-1.8
V
μA
I
CBO
Collector cut-off current
V
CB
=-30V; I
E
=0
-10
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-100
μA
h
FE-1
DC current gain
I
C
=-0.5A ; V
CE
=-2V
40
240
h
FE-2
DC current gain
I
C
=-2A ; V
CE
=-2V
13
50
C
OB
Collector output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
150
pF
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-2V
3
MHz
h
FE-1
Classifications
R
40-80
O
70-140
Y
120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA490
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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