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2SA733-Q

Description
PNP Silicon Plastic-Encapsulate Transistor
File Size429KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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2SA733-Q Overview

PNP Silicon Plastic-Encapsulate Transistor

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SA733-R
2SA733-Q
2SA733-P
2SA733-K
PNP Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Features
Capable of 0.25Watts of Power Dissipation.
Collector-current 0.1A
Collector-base Voltage 60V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=5.0uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=50uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
50
---
---
Vdc
B
V
(BR)CBO
60
---
---
Vdc
V
(BR)EBO
5.0
---
---
Vdc
I
CBO
---
---
0.1
uAdc
C
I
EBO
---
---
0.1
uAdc
ON CHARACTERISTICS
h
FE
DC Current Gain
(I
C
=1.0mAdc, V
CE
=6.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
90
200
600
---
D
V
CE(sat)
---
0.18
0.3
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
Transistor Frequency
(I
C
=10mAdc, V
CE
=6.0Vdc
f=30MHz)
100
180
---
MHz
E
G
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
B
C
MM
CLASSIFICATION OF H
FE (1)
Rank
Range
R
90-180
Q
135-270
P
200-400
K
300-600
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
1 of 2
Revision:
A
2011/01/01

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