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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5011
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
FEATURES
• High Gain Bandwidth Product (f
T
= 6.5 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
• 4-pin super minimold Package
ORDERING INFORMATION
Part Number
2SC5011
2SC5011-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3
100
150
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10515EJ01V0DS (1st edition)
(Previous No. P10399EJ2V0DS00)
Date Published August 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 1993 , 2004
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